onsemi

N01L83W2AT25IT

N01L83W2AT25IT Description

The N01L83W2AT25IT is a 1Mbit SRAM memory IC designed for high-performance applications requiring fast access times and reliable data storage. Manufactured by onsemi, this device features a parallel memory interface and is organized as 128K x 8, providing a total memory size of 1Mbit. It operates within a supply voltage range of 2.3V to 3.6V and offers an access time of 55 ns, ensuring rapid data retrieval. The write cycle time for both word and page operations is also 55 ns, making it highly efficient for real-time data processing.

This SRAM IC is housed in a 32TSOP package, which is suitable for surface-mount applications, and is available in a tape and reel (TR) format. The N01L83W2AT25IT has a moisture sensitivity level (MSL) of 3, allowing for a 168-hour exposure before assembly. It is classified under the HTSUS code 8542.32.0041 and is REACH unaffected, ensuring compliance with environmental regulations.

N01L83W2AT25IT Features

• Memory Type: Volatile SRAM, ensuring fast read and write operations.
• Memory Organization: 128K x 8, providing a total memory size of 1Mbit.
• Access Time: 55 ns, enabling rapid data retrieval.
• Write Cycle Time: 55 ns for both word and page operations, ensuring efficient data processing.
• Voltage Range: Operates within 2.3V to 3.6V, offering flexibility in power supply requirements.
• Mounting Type: Surface mount, suitable for compact and high-density designs.
• Package: 32TSOP, available in tape and reel (TR) format, facilitating automated assembly processes.
• Moisture Sensitivity Level (MSL): Level 3 (168 hours), providing a balance between moisture protection and assembly efficiency.
• Compliance: REACH unaffected and HTSUS code 8542.32.0041, ensuring regulatory compliance.

N01L83W2AT25IT Applications

The N01L83W2AT25IT is ideal for applications requiring fast and reliable data storage and retrieval. Its 55 ns access time and 55 ns write cycle time make it suitable for real-time processing in various industries, including:

• Telecommunications: For buffering and temporary storage in communication equipment.
• Industrial Automation: In control systems where quick data access is crucial.
• Consumer Electronics: In devices requiring fast memory access, such as gaming consoles and high-end multimedia devices.
• Medical Devices: For temporary data storage in medical imaging and diagnostic equipment.

Conclusion of N01L83W2AT25IT

The N01L83W2AT25IT is a high-performance SRAM memory IC that offers fast access times and reliable data storage. Its 128K x 8 organization and 55 ns access and write cycle times make it an excellent choice for applications requiring rapid data processing. The device's surface-mount 32TSOP package and moisture sensitivity level of 3 ensure it is suitable for a wide range of manufacturing processes. While the product is marked as obsolete, its technical specifications and performance benefits continue to make it a viable option for legacy systems and specific applications where its features are essential.