onsemi_N02L83W2AN25I
original

onsemi
N02L83W2AN25I

774-N02L83W2AN25I
PDF Datasheet
256KX8 STANDARD SRAM, 70ns, PDSO32, GREEN, STSOP1-32

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Tech Specifications

Access Time
70ns
Address Bus Width
18b
Density
2Mb
Max Operating Temperature
85°C
Memory Size
2Mb
Memory Type
Volatile, , SRAM
Min Operating Temperature
-40°C
Max Supply Voltage
3.6V
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N02L83W2AN25I Description

N02L83W2AN25I Description

The N02L83W2AN25I is a high-performance, 2Mbit Static Random Access Memory (SRAM) IC designed by onsemi. This memory IC features a parallel memory interface and a memory organization of 256K x 8, providing a total memory size of 2Mbit. It is designed for surface mount applications and comes in a 32STSOP package, ensuring compatibility with modern PCB designs. The N02L83W2AN25I operates within a supply voltage range of 2.3V to 3.6V and offers an access time of 55 nanoseconds, with a write cycle time of 55ns for both word and page operations. This IC is classified under ECCN 3A991B2A and HTSUS 8542.32.0041, and it is REACH unaffected. The product is packaged in trays and has a moisture sensitivity level (MSL) of 3, allowing for 168 hours of exposure before assembly.

N02L83W2AN25I Features

  • Memory Type: Volatile SRAM, ensuring fast read and write operations with no data retention when power is lost.
  • Memory Organization: 256K x 8, providing a total of 2Mbit of memory, ideal for applications requiring substantial temporary storage.
  • Access Time: 55 nanoseconds, ensuring rapid data retrieval and efficient performance in high-speed applications.
  • Write Cycle Time: 55ns for both word and page operations, facilitating quick data updates and modifications.
  • Supply Voltage: 2.3V to 3.6V, offering flexibility in power supply requirements and compatibility with a range of systems.
  • Mounting Type: Surface mount, suitable for modern, space-efficient PCB designs.
  • Package: 32STSOP, providing a compact and reliable form factor.
  • Moisture Sensitivity Level (MSL): Level 3 (168 hours), ensuring robustness during manufacturing processes.
  • ECCN and HTSUS: Compliant with 3A991B2A and 8542.32.0041, facilitating international trade and regulatory compliance.
  • REACH Status: REACH unaffected, ensuring compliance with environmental and health regulations.

N02L83W2AN25I Applications

The N02L83W2AN25I is ideal for a variety of applications where high-speed, volatile memory is required. Its fast access and write cycle times make it suitable for real-time data processing and temporary storage needs. Some specific use cases include:

  • Embedded Systems: Providing fast, temporary storage for microcontrollers and embedded processors.
  • Networking Equipment: Enabling quick data buffering and processing in routers, switches, and other network devices.
  • Industrial Automation: Supporting real-time data handling in PLCs and other industrial control systems.
  • Telecommunications: Facilitating high-speed data transfer and temporary storage in communication infrastructure.
  • Consumer Electronics: Enhancing performance in devices such as gaming consoles, digital cameras, and smart TVs.

Conclusion of N02L83W2AN25I

The N02L83W2AN25I is a versatile and high-performance SRAM IC that offers significant advantages over similar models. Its fast access and write cycle times, combined with a flexible supply voltage range and compact surface mount package, make it an excellent choice for a wide range of applications. Despite being classified as obsolete, the N02L83W2AN25I remains a reliable and efficient solution for applications requiring fast, temporary data storage. Its compliance with international regulations and environmental standards ensures its suitability for modern electronics manufacturing.

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