onsemi

NBRB8H100T4G

NBRB8H100T4G Description

The NBRB8H100T4G is a high-performance Schottky diode from onsemi, designed for automotive applications. It features a fast recovery time of less than 500ns and a high current capability of up to 8A, making it ideal for high-speed switching applications. With a low forward voltage drop of 710mV at 8A, it offers excellent efficiency. The diode has a reverse leakage current of only 4.5µA at 100V, ensuring minimal power loss in reverse bias conditions. The NBRB8H100T4G is mounted in a surface-mount D2PAK package, suitable for high-density PCB layouts.

NBRB8H100T4G Features

• Fast recovery time: ≤ 500ns
• High current capability: > 200mA (Io), 8A average rectified current
• Low forward voltage drop: 710mV @ 8A
• Low reverse leakage current: 4.5µA @ 100V
• High reverse voltage rating: 100V
• Surface-mount D2PAK package
• Automotive grade
• RoHS3 compliant
• REACH unaffected
• Moisture sensitivity level (MSL) 1 (unlimited)

NBRB8H100T4G Applications

The NBRB8H100T4G is ideal for various high-speed switching and power management applications in the automotive industry, including:

1. Motor control and protection circuits
2. Voltage regulation and stabilization circuits
3. Power conversion and rectification circuits
4. Battery management systems
5. Lighting and display systems

Conclusion of NBRB8H100T4G

The NBRB8H100T4G is a high-performance Schottky diode from onsemi, offering fast recovery time, high current capability, and low forward voltage drop. Its automotive-grade rating, RoHS3 compliance, and REACH unaffected status make it suitable for a wide range of automotive applications. With its unique features and advantages, the NBRB8H100T4G is an excellent choice for high-speed switching and power management circuits in the automotive industry.