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NCV317BD2TR4G

The NCV317BD2TR4G is a high voltage, high-side gate driver from ON Semiconductor. It is designed to drive power N-channel MOSFETs and IGBTs in a wide range of applications, including motor control, power supplies, and renewable energy systems.

Description:

The NCV317BD2TR4G is a monolithic high voltage gate driver that provides high-side and low-side gate drive for power N-channel MOSFETs and IGBTs. It features a high voltage boot-strap output that can drive a gate charge of up to 120 nC, and a peak current of 2 A. The device also includes a range of protection features, including over-voltage and under-voltage lockout, over-temperature protection, and short-circuit protection.

Features:

• High voltage, high-side gate driver
• Drives power N-channel MOSFETs and IGBTs
• High gate charge capability up to 120 nC
• Peak current of 2 A
• Wide operating voltage range of 4.5 V to 18 V
• Short-circuit protection
• Over-voltage and under-voltage lockout
• Over-temperature protection
• Small package size (SOIC-8)

Applications:

• Motor control
• Power supplies
• Renewable energy systems
• Battery management systems
• Industrial control systems
• Automotive applications

In summary, the NCV317BD2TR4G is a versatile and robust high voltage gate driver that is suitable for a wide range of power electronic applications. Its high gate charge capability and range of protection features make it an excellent choice for driving power N-channel MOSFETs and IGBTs in demanding environments.