onsemi_NDD02N60Z-1G
original

onsemi
NDD02N60Z-1G

278-NDD02N60Z-1G
PDF Datasheet
600V 2.2A N-Channel Power MOSFET, 4.8 Ohm, TO-251

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Tech Specifications

Package/Case
TO-251-3
Continuous Drain Current (ID)
2.2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
4R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
4.8R
Element Configuration
Single
Fall Time
7ns
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NDD02N60Z-1G Description

N-Channel 600 V 2.2A (Tc) 57W (Tc) Through Hole IPAK

FAQ

What voltage specification is listed for NDD02N60Z-1G?
The listed voltage-related specification for NDD02N60Z-1G is 600V.
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What operating temperature range does NDD02N60Z-1G support?
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