onsemi_NDD03N50Z-1G
original

onsemi
NDD03N50Z-1G

278-NDD03N50Z-1G
PDF Datasheet
500V 2.6A N-CH MOSFET, 3.3R Rds(on), TO-251

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Tech Specifications

Package/Case
TO-251-3
Continuous Drain Current (ID)
2.6A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
3.3R
Drain to Source Voltage (Vdss)
500V
Element Configuration
Single
Fall Time
7ns
Gate to Source Voltage (Vgs)
30V
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NDD03N50Z-1G Description

N-Channel 500 V 2.6A (Tc) 58W (Tc) Through Hole IPAK

FAQ

What voltage specification is listed for NDD03N50Z-1G?
The listed voltage-related specification for NDD03N50Z-1G is 500V.
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