onsemi

NDD03N60Z-1G

NDD03N60Z-1G Description

The NDD03N60Z-1G is a single N-Channel MOSFET from onsemi, designed for high-power applications. With a drain to source voltage (Vdss) of 600V, it can handle high voltage requirements. The device features a maximum power dissipation of 61W at Tc, making it suitable for power electronics applications. The NDD03N60Z-1G has an input capacitance (Ciss) of 312 pF at 25V, ensuring fast switching speeds. The gate charge (Qg) is 12 nC at 10V, contributing to low power consumption. The device is packaged in an IPAK tube, which is ideal for through-hole mounting.

NDD03N60Z-1G Features

• 600V drain to source voltage (Vdss) for high-voltage applications
• 61W maximum power dissipation (Tc) for efficient power management
• 312 pF input capacitance (Ciss) at 25V for fast switching speeds
• 12 nC gate charge (Qg) at 10V for low power consumption
• 2.6A continuous drain current (Id) at 25°C for high current handling
• 3.6Ω maximum Rds On at 1.2A, 10V for low on-resistance
• ±30V maximum gate to source voltage (Vgs) for wide voltage range
• 4.5V maximum threshold voltage (Vgs(th)) at 50µA for reliable operation
• REACH unaffected status for compliance with European regulations
• Moisture sensitivity level (MSL) 1 for unlimited storage time
• Through-hole mounting type for easy integration into existing designs

NDD03N60Z-1G Applications

The NDD03N60Z-1G is ideal for various high-power applications, including:

1. Power electronics, such as power supplies and motor drives
2. Industrial control systems, where high voltage and current handling are required
3. Automotive electronics, such as electric vehicle charging systems and powertrain control
4. Renewable energy systems, like solar inverters and wind turbine converters

Conclusion of NDD03N60Z-1G

The NDD03N60Z-1G is a high-performance N-Channel MOSFET from onsemi, offering a combination of high voltage, current handling, and low power consumption. Its unique features, such as the 600V drain to source voltage and 61W power dissipation, make it suitable for a wide range of high-power applications. Although the device is now obsolete, it remains a reliable choice for existing designs and systems that require its specific performance characteristics.