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NDF10N60ZH

The NDF10N60ZH is a high-power N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The NDF10N60ZH is a surface-mount MOSFET transistor with a drain-source voltage (VDS) of 600 volts and a continuous drain current (ID) of 10.6A. It features a low on-state resistance (RDS(on)) of 55 milliohms maximum, which helps to minimize power dissipation and improve efficiency in power electronic circuits.

Features:

• N-channel MOSFET transistor
• Surface-mount package
• Drain-source voltage (VDS) of 600V
• Continuous drain current (ID) of 10.6A
• Low on-state resistance (RDS(on)) of 55 milliohms maximum
• Fast switching speed
• High input impedance
• Low gate charge
• Avalanche energy capable

Applications:

The NDF10N60ZH is suitable for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Renewable energy systems
• Battery management systems
• Inverters
• Switch mode power supplies (SMPS)
• Class D audio amplifiers
• High voltage switching applications

Overall, the NDF10N60ZH is a high-power MOSFET transistor that offers excellent performance in a wide range of power electronic applications. Its low on-state resistance and fast switching speed make it an ideal choice for applications that require high efficiency and high power density.