onsemi_NDS356P
original

onsemi
NDS356P

278-NDS356P
PDF Datasheet
MOSFET P-CH 20V 1.1A SSOT-3

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Tech Specifications

Package/Case
TO-236-3
Continuous Drain Current (ID)
1.1A
Current Rating
-1.1A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
210mR
Drain to Source Voltage (Vdss)
20V
Fall Time
17ns
Gate to Source Voltage (Vgs)
12V
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NDS356P Description

P-Channel 20 V 1.1A (Ta) 500mW (Ta) Surface Mount SOT-23-3

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