onsemi_NDS7002A

onsemi
NDS7002A  
Single FETs, MOSFETs

onsemi
NDS7002A
278-NDS7002A
Ersa
onsemi-NDS7002A-datasheets-1176043.pdf
MOSFET N-CH 60V 280MA SOT-23
In Stock : 71401

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    NDS7002A Description

    NDS7002A Description

    The NDS7002A is a high-performance N-Channel MOSFET from onsemi, designed for applications requiring low on-resistance and high efficiency. With a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 280mA at 25°C, this device is well-suited for a wide range of power management and switching applications.

    NDS7002A Features

    • Low On-Resistance: The NDS7002A boasts a maximum on-resistance (Rds On) of 2Ω at 500mA and 10V, ensuring minimal power dissipation and high efficiency in switching applications.
    • High Input Capacitance: With a maximum input capacitance (Ciss) of 50 pF at 25V, this MOSFET provides fast switching speeds and reduced charge/discharge times.
    • Robust Voltage Ratings: The device can handle a maximum gate-source voltage (Vgs) of ±20V and a drain-source voltage (Vdss) of 60V, making it suitable for high-voltage applications.
    • Surface Mount Packaging: The NDS7002A is available in a compact SOT-23 package, ideal for space-constrained designs.
    • Environmental Compliance: This device is compliant with the RoHS3 directive and is unaffected by REACH regulations, ensuring environmental responsibility and regulatory compliance.

    NDS7002A Applications

    The NDS7002A's unique combination of low on-resistance, high input capacitance, and robust voltage ratings make it ideal for a variety of applications, including:

    • Power Management: In battery-powered devices, the NDS7002A can efficiently manage power distribution and reduce power loss.
    • Motor Control: The device's high input capacitance and low on-resistance make it suitable for driving small motors in applications such as robotics and automation.
    • Switching Regulators: The NDS7002A can be used in switching regulators to provide efficient power conversion and voltage regulation.
    • Automotive Electronics: The device's ability to handle high voltages and currents makes it suitable for use in automotive electronics, such as power windows and seat controls.

    Conclusion of NDS7002A

    The NDS7002A from onsemi is a versatile and high-performance N-Channel MOSFET, offering a unique combination of low on-resistance, high input capacitance, and robust voltage ratings. Its compact SOT-23 package and environmental compliance make it an ideal choice for a wide range of power management, switching, and motor control applications. With its superior performance and reliability, the NDS7002A stands out as a top choice for engineers looking to optimize their designs for efficiency and performance.

    Tech Specifications

    FET Type
    Input Capacitance (Ciss) (Max) @ Vds
    Product Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Power Dissipation (Max)
    Package / Case
    Technology
    REACH Status
    Mfr
    Vgs (Max)
    RoHS Status
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    FET Feature
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Series
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Base Product Number
    Typical Input Capacitance @ Vds (pF)
    Category
    Configuration
    PCB changed
    HTS
    Maximum Gate Source Leakage Current (nA)
    Number of Elements per Chip
    ECCN (US)
    PPAP
    Maximum Power Dissipation (mW)
    Channel Mode
    Automotive
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Supplier Package
    Maximum IDSS (uA)
    Process Technology
    Package Height
    Maximum Positive Gate Source Voltage (V)
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Typical Gate Threshold Voltage (V)
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Gate Source Voltage (V)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    Typical Gate Plateau Voltage (V)
    Package Length
    Typical Gate Charge @ 10V (nC)
    Standard Package Name
    Maximum Diode Forward Voltage (V)
    Pin Count
    Mounting
    Typical Diode Forward Voltage (V)
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Typical Gate Charge @ Vgs (nC)

    NDS7002A Documents

    Download datasheets and manufacturer documentation for NDS7002A

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    Ersa onsemi RoHS       onsemi REACH       Material Declaration NDS7002A      

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