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NGTB15N120FL2WG

The NGTB15N120FL2WG is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The NGTB15N120FL2WG is an N-channel enhancement mode field-effect transistor (MOSFET) with a drain-to-source voltage (VDS) of 1200 volts and a continuous drain current (ID) of 90 amperes. It features a low on-state resistance (RDS(on)) of 4.5 milliohms maximum, which allows for efficient power switching with minimal power loss.

Features:

• High voltage operation: 1200V drain-to-source voltage rating
• High current capability: 90A continuous drain current
• Low on-state resistance: 4.5 milliohms maximum
• Enhancement mode operation
• Logic level gate drive compatible
• Avalanche energy sustained: 2.0 Joules
• Low gate charge for fast switching
• High temperature operation: -55°C to +175°C

Applications:

The NGTB15N120FL2WG is suitable for a wide range of power electronic applications, including:

• Motor control for industrial and automotive applications
• Power supplies for telecommunications and computer systems
• Renewable energy systems, such as solar and wind power inverters
• Battery charging and management systems
• High voltage switching and regulation in industrial and commercial equipment

Overall, the NGTB15N120FL2WG is a high performance MOSFET transistor that offers high voltage and current capability, low on-state resistance, and fast switching speeds. It is ideal for use in a variety of power electronic applications where efficient and reliable power switching is required.