onsemi

NGTB35N65FL2WG

NGTB35N65FL2WG Description

The NGTB35N65FL2WG is a high-performance IGBT (Insulated Gate Bipolar Transistor) from onsemi, designed to deliver exceptional electrical characteristics and reliability. This Trench Field Stop IGBT features a maximum collector-emitter breakdown voltage of 650V and is capable of handling a continuous collector current of 70A, with a pulsed current rating of 120A. The device is mounted through-hole and is packaged in a tube, making it suitable for a wide range of applications.

NGTB35N65FL2WG Features

• Technical Specifications:

  • Reverse Recovery Time (trr): 68 ns
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Td (on/off) @ 25°C: 72ns/132ns
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Gate Charge: 125 nC
  • Power - Max: 300 W
  • Switching Energy: 840µJ (on), 280µJ (off)
  • Current - Collector (Ic) (Max): 70 A
  • Current - Collector Pulsed (Icm): 120 A

• Performance Benefits:

  • Low on-state voltage drop (Vce(on)) for high efficiency
  • Fast switching times for reduced energy loss
  • Low gate charge for minimal power consumption
  • High power rating for demanding applications

• Unique Advantages:

  • Trench Field Stop technology for improved ruggedness and performance
  • REACH Unaffected and ROHS3 Compliant for environmental sustainability
  • Through-hole mounting for easy integration into existing designs

NGTB35N65FL2WG Applications

The NGTB35N65FL2WG is ideal for a variety of high-power applications, including:

• Industrial Motor Control: Utilizing its high current and voltage ratings, this IGBT is well-suited for motor drives and inverters in industrial automation systems.
• Power Supplies: Its low on-state voltage drop and fast switching times make it an excellent choice for high-efficiency power supply designs.
• Renewable Energy: The NGTB35N65FL2WG can be used in solar inverters and wind turbine converters, thanks to its ability to handle high power levels and withstand harsh environmental conditions.
• Electric Vehicles: This IGBT is suitable for electric vehicle applications, such as battery management systems and traction motor controllers, due to its high power rating and robust performance.

Conclusion of NGTB35N65FL2WG

The NGTB35N65FL2WG from onsemi is a powerful and reliable IGBT designed for high-power applications. Its unique features, such as Trench Field Stop technology and low on-state voltage drop, make it an excellent choice for demanding applications in industrial motor control, power supplies, renewable energy, and electric vehicles. With its REACH Unaffected and ROHS3 Compliant status, the NGTB35N65FL2WG is not only a high-performance solution but also an environmentally friendly one.