onsemi

NGTB75N60FL2WG

NGTB75N60FL2WG Description

The NGTB75N60FL2WG from onsemi is a high-performance 600V, 75A trench field-stop IGBT housed in a TO-247 package, designed for demanding power electronics applications. With a collector-emitter breakdown voltage (V_CES) of 600V and a maximum collector current (I_C) of 100A, this device offers robust performance in high-voltage switching scenarios. Its low V_CE(on) of 2V @ 15V, 75A ensures minimal conduction losses, while the switching energy (E_on/E_off) of 1.5mJ/1mJ enhances efficiency in high-frequency applications. Though marked as Obsolete, its specifications remain competitive for legacy designs requiring reliable power handling.

NGTB75N60FL2WG Features

• Trench Field Stop Technology: Reduces saturation voltage and improves switching efficiency.
• High Current Capability: 75A continuous (100A max) with 200A pulsed current (I_CM) for surge handling.
• Fast Switching: Turn-on/off delays (t_d) of 110ns/270ns and reverse recovery time (t_rr) of 80ns optimize dynamic performance.
• Low Gate Charge (310nC): Minimizes drive power requirements.
• High Power Dissipation: 595W max power rating ensures thermal stability.
• Standard Input Type: Compatible with conventional gate drivers.
• MSL 1 (Unlimited): Suitable for extended storage without moisture sensitivity concerns.

NGTB75N60FL2WG Applications

This IGBT excels in:

• Motor Drives: High-efficiency control in industrial and automotive systems.
• Uninterruptible Power Supplies (UPS): Reliable switching in backup power units.
• Solar Inverters: Efficient energy conversion in renewable energy systems.
• Welding Equipment: Robust performance under high-current, intermittent loads.
• Induction Heating: Fast switching for precision temperature control.

Conclusion of NGTB75N60FL2WG

The NGTB75N60FL2WG combines high voltage tolerance, low conduction losses, and fast switching—making it ideal for legacy designs in industrial and energy applications. While obsolete, its trench field-stop architecture and TO-247 packaging ensure compatibility with existing systems requiring durable, high-power IGBTs. Engineers seeking alternatives should consider newer trench-stop IGBTs from onsemi with enhanced thermal and switching characteristics.