onsemi_NIV1161MTTAG
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onsemi
NIV1161MTTAG

149-NIV1161MTTAG
PDF Datasheet
Low Cap ESD Protection IC, 6-Term, S-PDSO-N6, 150C
19 Weeks

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ISO9001
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Tech Specifications

Max Operating Temperature
150
Number of Terminals
6
Min Operating Temperature
-55
Terminal Position
DUAL
JEDEC Package Code
S-PDSO-N6
Width
2
Length
2
Number of Functions
1
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NIV1161MTTAG Description

The NIV1161MTTAG is a high-voltage, high-power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and power converters.

Description:

The NIV1161MTTAG is a N-channel MOSFET with a voltage rating of 100V and a continuous drain current of 22A. It features a low on-state resistance (RDS(on)) of 4.5 mOhm maximum, which helps to minimize power dissipation and improve efficiency. The device also has a fast switching speed, with a typical gate charge (Qg) of 44nC.

Features:

  • 100V, 22A N-channel MOSFET
  • Low on-state resistance (RDS(on)) of 4.5 mOhm maximum
  • Fast switching speed with a typical gate charge (Qg) of 44nC
  • High input impedance and low gate-source capacitance
  • Avalanche energy capable
  • RoHS compliant

Applications:

The NIV1161MTTAG is suitable for use in a wide range of power electronic applications, including:

  • Motor control
  • Power supplies
  • Power converters
  • Battery management systems
  • Industrial control systems
  • Automotive applications

In summary, the NIV1161MTTAG is a high-voltage, high-power MOSFET transistor that offers low on-state resistance and fast switching speed. It is suitable for use in a variety of power electronic applications, including motor control, power supplies, and power converters.

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