


onsemi
NJVMJD112G
276-NJVMJD112G
PDF Datasheet
2.0 A, 100 V NPN Darlington Bipolar Power Transistor, 75-TUBE
8 Weeks
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Responsible qualityTech Specifications
Package/Case
TO-252-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector-emitter Voltage-Max
3V
Lead Free
Lead Free
Max Collector Current
2A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
NJVMJD112G Description
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Surface Mount DPAK
FAQ
Is NJVMJD112G currently in stock?
Yes. NJVMJD112G currently shows 87 unit(s) in stock.
What operating temperature range does NJVMJD112G support?
Are there related or alternative parts for NJVMJD112G?
What is the standard lead time for NJVMJD112G?
What is the mounting type of NJVMJD112G?



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