onsemi_NJVMJD112G
original

onsemi
NJVMJD112G

276-NJVMJD112G
PDF Datasheet
2.0 A, 100 V NPN Darlington Bipolar Power Transistor, 75-TUBE
8 Weeks

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ISO9001
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ISO14001
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Tech Specifications

Package/Case
TO-252-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector-emitter Voltage-Max
3V
Lead Free
Lead Free
Max Collector Current
2A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
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NJVMJD112G Description

Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Surface Mount DPAK

FAQ

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Yes. NJVMJD112G currently shows 87 unit(s) in stock.
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