onsemi

NJVMJD122T4G

The NJVMJD122T4G is a high voltage, high power MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including motor control, power conversion, and power management.

Description:

The NJVMJD122T4G is an N-channel MOSFET with a drain-source voltage (VDS) of 1200V and a continuous drain current (ID) of 120A. It features a low on-state resistance (RDS(on)) of 4.5 milliohms maximum, which helps to minimize power dissipation and improve efficiency in high current applications.

Features:

• High voltage, high power MOSFET
• N-channel, logic level gate
• Drain-source voltage (VDS) of 1200V
• Continuous drain current (ID) of 120A
• Low on-state resistance (RDS(on)) of 4.5 milliohms maximum
• Suitable for use in high current applications

Applications:

The NJVMJD122T4G is suitable for use in a variety of applications, including:

• Motor control
• Power conversion
• Power management
• Industrial control
• Renewable energy systems
• Automotive applications

Overall, the NJVMJD122T4G is a high performance MOSFET that offers high voltage and high current handling capabilities in a compact package. Its low on-state resistance and logic level gate make it well-suited for use in a wide range of power electronic applications.