onsemi
NJVMJD3055T4G

276-NJVMJD3055T4G
PDF Datasheet
10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
13 Weeks

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Tech Specifications

Package/Case
TO-252-3
Collector Base Voltage (VCBO)
70V
Collector Emitter Breakdown Voltage
60V
Collector-emitter Voltage-Max
8V
Lead Free
Lead Free
Max Collector Current
10A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
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NJVMJD3055T4G Description

NJVMJD3055T4G Description

The NJVMJD3055T4G is a high-performance NPN bipolar transistor designed and manufactured by onsemi. This device is part of the Single Bipolar Transistors category and offers a range of advanced features that make it suitable for various applications. With a maximum collector current of 10 A and a collector-emitter breakdown voltage of 60 V, the NJVMJD3055T4G delivers exceptional performance in demanding electronic systems.

NJVMJD3055T4G Features

  • High Current Handling: Capable of handling up to 10 A of collector current, making it ideal for high-power applications.
  • Low Saturation Voltage: Features a low Vce saturation voltage of 8 V at 3.3 A and 10 A, ensuring efficient operation in low-voltage circuits.
  • High DC Current Gain: Offers a minimum hFE of 20 at 4 A and 4 V, providing excellent amplification capabilities.
  • Robust Construction: Moisture Sensitivity Level (MSL) of 1, indicating unlimited storage time before reflow soldering.
  • Surface Mount Package: DPAK package allows for surface mounting, enabling compact and efficient PCB designs.
  • Compliance: RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.

NJVMJD3055T4G Applications

The NJVMJD3055T4G is an ideal choice for applications requiring high current and power handling capabilities. Some specific use cases include:

  1. Power Amplifiers: Due to its high current and power ratings, the NJVMJD3055T4G is well-suited for use in power amplifiers, where it can efficiently handle large currents and voltages.
  2. Motor Control: Its ability to handle high currents makes it an excellent choice for motor control applications, where it can drive large motors with ease.
  3. Switching Regulators: The low saturation voltage and high current handling capabilities make the NJVMJD3055T4G ideal for use in switching regulators, where efficiency and performance are critical.

Conclusion of NJVMJD3055T4G

The NJVMJD3055T4G is a versatile and high-performance NPN bipolar transistor that offers a combination of high current handling, low saturation voltage, and excellent amplification capabilities. Its robust construction, compliance with environmental regulations, and surface mount package make it an ideal choice for a wide range of applications, including power amplifiers, motor control, and switching regulators. With its unique features and advantages over similar models, the NJVMJD3055T4G is a reliable and efficient solution for demanding electronic systems.

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