onsemi_NJVMJD31CT4G-VF01
NJVMJD31CT4G-VF01(1)
NJVMJD31CT4G-VF01(2)
NJVMJD31CT4G-VF01(3)

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NJVMJD31CT4G-VF01  
Single Bipolar Transistors

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NJVMJD31CT4G-VF01
276-NJVMJD31CT4G-VF01
Ersa
onsemi-NJVMJD31CT4G-VF01-datasheets-6492235.pdf
TRANS NPN 100V 3A DPAK
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NJVMJD31CT4G-VF01 Description

The NJVMJD31CT4G-VF01 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. Here is a description of the model, its features, and potential applications:

Description:

The NJVMJD31CT4G-VF01 is a high-performance N-channel MOSFET designed for use in a variety of power electronic applications. It is a discrete semiconductor device that uses a gate to control the flow of current between the drain and source terminals when sufficient voltage is applied.

Features:

  1. N-Channel Technology: Utilizes N-channel technology for high efficiency and fast switching speeds.
  2. High Voltage Rating: The device is rated for high voltage operation, making it suitable for applications requiring robust voltage handling.
  3. Low On-State Resistance (RDS(on)): Offers low on-state resistance, which minimizes power dissipation and improves overall efficiency.
  4. High Current Capability: Capable of handling high current loads, making it ideal for power applications.
  5. Thermal Stability: Designed with thermal stability in mind to withstand high temperatures during operation.
  6. Protection Features: May include built-in protection features such as over-voltage, over-current, and over-temperature protection, depending on the specific model.
  7. Packaging: The VF01 package is typically a surface-mount package designed for easy integration into printed circuit boards.

Applications:

  1. Motor Control: Used in the control of electric motors in applications like robotics and industrial machinery.
  2. Power Supplies: Suitable for switching power supplies due to its high voltage and current handling capabilities.
  3. Automotive Applications: Can be used in various automotive electronics for power management and control.
  4. UPS Systems: Utilized in uninterruptible power supply systems for efficient energy conversion and backup power.
  5. Industrial Control Systems: Ideal for use in control systems that require precise and efficient power management.
  6. Battery Management Systems: Can be used in the management and control of battery charging and discharging in energy storage systems.

Please note that the specific features and applications can vary, and it's essential to refer to the datasheet provided by ON Semiconductor for detailed technical specifications and to ensure that the device meets the requirements of your specific application.

Tech Specifications

Operating Temperature
Frequency - Transition
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
ECCN
Mounting Type
Product Status
Voltage - Collector Emitter Breakdown (Max)
Supplier Device Package
Series
Transistor Type
Package / Case
Power - Max
REACH Status
Mfr
Current - Collector Cutoff (Max)
HTSUS
Package
RoHS Status
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Moisture Sensitivity Level (MSL)

NJVMJD31CT4G-VF01 Documents

Download datasheets and manufacturer documentation for NJVMJD31CT4G-VF01

Ersa Mold Compound 16/Aug/2018      
Ersa MJD31 (NPN), MJD32 (PNP)      
Ersa Mult Dev EOL 07/Jul/2021      
Ersa MJD31 (NPN), MJD32 (PNP)      
Ersa onsemi RoHS       Material Declaration NJVMJD31CT4G-VF01       onsemi REACH      

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