onsemi_NJVMJD47T4G
original

onsemi
NJVMJD47T4G

276-NJVMJD47T4G
PDF Datasheet
1.0 A, 250 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
13 Weeks

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Tech Specifications

Package/Case
DPAK
Collector Base Voltage (VCBO)
350V
Collector Emitter Breakdown Voltage
250V
Collector Emitter Saturation Voltage
1V
Collector-emitter Voltage-Max
1V
Emitter Base Voltage (VEBO)
5V
Height
2.38mm
Lead Free
Lead Free
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NJVMJD47T4G Description

NJVMJD47T4G Description

The NJVMJD47T4G is a high-performance NPN transistor designed and manufactured by onsemi. This device is part of the Single Bipolar Transistors category and is known for its exceptional technical specifications and performance benefits. With a maximum collector-emitter breakdown voltage of 250V and a maximum collector current of 1A, the NJVMJD47T4G is an ideal choice for various applications that require high power handling and voltage capabilities.

NJVMJD47T4G Features

  • Frequency - Transition: 10MHz, making it suitable for high-frequency applications.
  • Current - Collector (Ic) (Max): 1A, ensuring high power handling capabilities.
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A, providing efficient operation at low voltages.
  • ECCN: EAR99, indicating export control classification.
  • Mounting Type: Surface Mount, facilitating easy integration into various electronic systems.
  • Product Status: Active, ensuring ongoing availability and support.
  • Voltage - Collector Emitter Breakdown (Max): 250V, providing high voltage capabilities.
  • Supplier Device Package: DPAK, a popular and compact package type.
  • Transistor Type: NPN, suitable for a wide range of applications.
  • Power - Max: 1.56W, ensuring high power dissipation capabilities.
  • REACH Status: REACH Unaffected, adhering to European chemical regulations.
  • RoHS Status: ROHS3 Compliant, ensuring environmental friendliness.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V, providing consistent performance.

NJVMJD47T4G Applications

The NJVMJD47T4G is ideal for various applications that require high power handling, voltage capabilities, and high-frequency operation. Some specific use cases include:

  1. Power Amplifiers: Due to its high power and voltage capabilities, the NJVMJD47T4G is well-suited for power amplifier applications.
  2. Switching Regulators: The device's high-frequency capabilities make it an excellent choice for switching regulator applications.
  3. Motor Control: The NJVMJD47T4G's high current and voltage ratings make it suitable for motor control applications.

Conclusion of NJVMJD47T4G

The NJVMJD47T4G is a versatile and high-performance NPN transistor that offers a unique combination of technical specifications and performance benefits. Its high power handling, voltage capabilities, and high-frequency operation make it an ideal choice for a wide range of applications, including power amplifiers, switching regulators, and motor control. With its compact DPAK package and surface mount design, the NJVMJD47T4G is easy to integrate into various electronic systems, making it a popular choice among engineers and designers in the electronics industry.

FAQ

What voltage specification is listed for NJVMJD47T4G?
The listed voltage-related specification for NJVMJD47T4G is 350V.
Is NJVMJD47T4G currently in stock?
What operating temperature range does NJVMJD47T4G support?
What is NJVMJD47T4G?
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