onsemi

NJVNJD35N04T4G

The NJVNJD35N04T4G is a high voltage N-channel power MOSFET offered by ON Semiconductor. It is designed for use in a variety of power electronics applications, including motor control, power supplies, and battery management systems.

Description:

The NJVNJD35N04T4G is a high voltage N-channel power MOSFET with a drain-source voltage (VDS) of 350V and a continuous drain current (ID) of 4.1A. It features a low on-state resistance (RDS(on)) of 4.5 milliohms maximum, which helps to minimize power dissipation and improve efficiency in power conversion applications.

Features:

1. High drain-source voltage (VDS) of 350V
2. Continuous drain current (ID) of 4.1A
3. Low on-state resistance (RDS(on)) of 4.5 milliohms maximum
4. High input impedance and fast switching speed
5. Suitable for use in a wide range of power electronics applications

Applications:

1. Motor control applications, such as brushless DC motor control and stepper motor control
2. Power supply applications, such as offline switch mode power supplies (SMPS) and battery chargers
3. Battery management systems, such as battery protection circuits and battery charging circuits
4. Class D audio amplifiers and other high-efficiency power conversion applications
5. Industrial control and automation systems

In summary, the NJVNJD35N04T4G is a high voltage N-channel power MOSFET that offers a combination of high voltage and low on-state resistance, making it suitable for use in a wide range of power electronics applications. Its fast switching speed and high input impedance also make it well-suited for use in high-efficiency power conversion applications.