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NJX1675PDR2G
277-NJX1675PDR2G
PDF Datasheet
Dual Complementary Bipolar Transistors 3.0 A, 30 V, SOIC-8 Narrow Body, 2500-REEL
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Tech Specifications
Package/Case
SOIC
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
115mV
Emitter Base Voltage (VEBO)
-7V
Gain Bandwidth Product
100MHz
hFE Min
100
NJX1675PDR2G Description
Bipolar (BJT) Transistor Array 30V 3A 100MHz, 120MHz 2W Surface Mount 8-SOIC
FAQ
What voltage specification is listed for NJX1675PDR2G?
The listed voltage-related specification for NJX1675PDR2G is 30V.
What package or case is NJX1675PDR2G available in?
What is NJX1675PDR2G?
Are there related or alternative parts for NJX1675PDR2G?
What operating temperature range does NJX1675PDR2G support?
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