onsemi_NLAS4684MR2G
original

onsemi
NLAS4684MR2G

747-NLAS4684MR2G
Dual SPDT Analog Switch, 2-Ch, 800mR, 1.8-5.5V, MSOP
0 weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
MSOP
Halogen Free
Halogen Free
Height
0.95mm
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
Max Supply Voltage
5.5V
Show More

NLAS4684MR2G Description

NLAS4684MR2G is a high-power, high-efficiency, and high-reliability MOSFET from ON Semiconductor. It is designed for use in a wide range of applications, including automotive, industrial, and renewable energy systems.

Description:

The NLAS4684MR2G is a N-channel, logic-level MOSFET with a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 90A. It features a logic-level gate drive with a maximum gate-source voltage (VGS) of 5V and a threshold voltage (VTH) of -4V to 2V. The device has a low on-state resistance (RDS(on)) of 3.6mΩ max, which helps to minimize power dissipation and improve efficiency.

Features:

  1. High-power and high-efficiency: The NLAS4684MR2G is designed to handle high power levels with low on-state resistance, making it suitable for high-power applications.
  2. High-reliability: The device is built with advanced manufacturing processes and rigorous testing to ensure high reliability and long life in demanding applications.
  3. Logic-level gate drive: The MOSFET features a logic-level gate drive, which simplifies the design of the gate drive circuit and reduces the overall system cost.
  4. Avalanche energy capable: The NLAS4684MR2G is designed to withstand high-energy transients, making it suitable for applications with high-energy transients such as automotive and industrial systems.
  5. Low thermal resistance: The device has a low thermal resistance (RθJA) of 35°C/W max, which helps to improve thermal performance and reduce the risk of thermal failure.

Applications:

  1. Automotive: The NLAS4684MR2G is suitable for use in automotive applications such as electric vehicle (EV) powertrains, battery management systems (BMS), and charging systems.
  2. Industrial: The MOSFET can be used in industrial applications such as motor drives, power supplies, and renewable energy systems.
  3. Renewable energy: The device is suitable for use in renewable energy systems such as solar inverters and wind turbines.
  4. Power supplies: The NLAS4684MR2G can be used in power supply applications such as DC-DC converters and battery chargers.

In summary, the NLAS4684MR2G is a high-power, high-efficiency, and high-reliability MOSFET from ON Semiconductor. It features a logic-level gate drive, low on-state resistance, and high reliability, making it suitable for a wide range of applications, including automotive, industrial, and renewable energy systems.

FAQ

What is the standard lead time for NLAS4684MR2G?
The standard lead time for NLAS4684MR2G is 0 weeks.
What package or case is NLAS4684MR2G available in?
What voltage specification is listed for NLAS4684MR2G?
What is NLAS4684MR2G?
Is NLAS4684MR2G currently in stock?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ