onsemi_NLHV4157NDFT2G

onsemi
NLHV4157NDFT2G  
Analog Switches - Special Purpose ICs

onsemi
NLHV4157NDFT2G
780-NLHV4157NDFT2G
Ersa
onsemi-NLHV4157NDFT2G-datasheets-9787811.pdf
NEGATIVE VOLTAGE SPDT SWITCH
In Stock : 9849

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NLHV4157NDFT2G Description

The NLHV4157NDFT2G is a high-voltage, high-power MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including power switching, motor control, and power conversion.

Description:

The NLHV4157NDFT2G is a N-channel MOSFET with a drain-source voltage (Vds) of 1200V and a continuous drain current (Id) of 120A. It features a low on-state resistance (Rds(on)) of 4.2 mOhm max, which helps to minimize power dissipation and improve efficiency.

Features:

  • High voltage and current ratings: The NLHV4157NDFT2G is capable of handling high voltage and current levels, making it suitable for use in demanding power applications.
  • Low on-state resistance: The low Rds(on) of the NLHV4157NDFT2G helps to reduce power losses and improve overall efficiency.
  • Fast switching: The MOSFET has a fast switching time, which makes it suitable for use in high-frequency applications.
  • High temperature operation: The NLHV4157NDFT2G is designed to operate in high temperature environments, with a maximum operating temperature of 175°C.

Applications:

The NLHV4157NDFT2G is suitable for use in a variety of applications, including:

  • Power switching: The MOSFET can be used in power switching applications, such as in power supplies and inverters.
  • Motor control: The NLHV4157NDFT2G can be used in motor control applications, such as in industrial motor drives and automotive applications.
  • Power conversion: The MOSFET can be used in power conversion applications, such as in DC-DC converters and AC-DC converters.

Overall, the NLHV4157NDFT2G is a high-performance MOSFET that offers high voltage and current ratings, low on-state resistance, and fast switching capabilities, making it suitable for use in a wide range of power applications.

Tech Specifications

Number of Channels per Chip
Power Supply Type
Output Signal Type
Configuration
PPAP
Maximum Turn-On Time (ns)
Product Status
Voltage - Supply, Dual (V±)
Automotive
Supplier Package
Maximum High Level Output Current (mA)
Package / Case
Number of Channels
On-State Resistance (Max)
REACH Status
Multiplexer/Demultiplexer Circuit
EU RoHS
Maximum Turn-Off Time (ns)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Frequency (25°C) @ Vcc (MHz)
ECCN
Mounting Type
Standard Package Name
Maximum On Resistance Range (Ohm)
Pin Count
Mounting
Input Signal Type
Minimum Single Supply Voltage (V)
HTSUS
Package
Switch Architecture
PCB changed
HTS
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Propagation Delay Test Condition (pF)
Package Height
Mfr
Polarity
Features
Maximum On Resistance (Ohm)
RoHS Status
Typical Single Supply Voltage (V)
Applications
Number of Inputs per Chip
Maximum Propagation Delay Bus to Bus (ns)
-3db Bandwidth
Number of Outputs per Chip
Chip Enable Signals
Package Length
Maximum Low Level Output Current (mA)
Voltage - Supply, Single (V+)
Series
Type
Maximum Single Supply Voltage (V)
Switch Circuit
Part Status
Package Width
Base Product Number
On Time - Max
Mounting Style
Maximum Dual Supply Voltage
Unit Weight
Off Time - Max
Minimum Dual Supply Voltage
Supply Current - Max
On Resistance - Max
RoHS
Supply Voltage - Min
Minimum Operating Temperature
Supply Type
Maximum Operating Temperature
Supply Voltage - Max
Pd - Power Dissipation
USHTS

NLHV4157NDFT2G Documents

Download datasheets and manufacturer documentation for NLHV4157NDFT2G

Ersa NLHV4157NDFT2G Site Addition 29/Aug/2019      
Ersa NLHV4157N      
Ersa NLHV4157N      
Ersa NLHV4157NDFT2G wafer/Des Chg 8/Mar/2018      
Ersa onsemi RoHS       onsemi REACH       Material Declaration NLHV4157NDFT2G      

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