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NLHV4157NDFT2G

The NLHV4157NDFT2G is a high-voltage, high-power MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including power switching, motor control, and power conversion.

Description:

The NLHV4157NDFT2G is a N-channel MOSFET with a drain-source voltage (Vds) of 1200V and a continuous drain current (Id) of 120A. It features a low on-state resistance (Rds(on)) of 4.2 mOhm max, which helps to minimize power dissipation and improve efficiency.

Features:

• High voltage and current ratings: The NLHV4157NDFT2G is capable of handling high voltage and current levels, making it suitable for use in demanding power applications.
• Low on-state resistance: The low Rds(on) of the NLHV4157NDFT2G helps to reduce power losses and improve overall efficiency.
• Fast switching: The MOSFET has a fast switching time, which makes it suitable for use in high-frequency applications.
• High temperature operation: The NLHV4157NDFT2G is designed to operate in high temperature environments, with a maximum operating temperature of 175°C.

Applications:

The NLHV4157NDFT2G is suitable for use in a variety of applications, including:

• Power switching: The MOSFET can be used in power switching applications, such as in power supplies and inverters.
• Motor control: The NLHV4157NDFT2G can be used in motor control applications, such as in industrial motor drives and automotive applications.
• Power conversion: The MOSFET can be used in power conversion applications, such as in DC-DC converters and AC-DC converters.

Overall, the NLHV4157NDFT2G is a high-performance MOSFET that offers high voltage and current ratings, low on-state resistance, and fast switching capabilities, making it suitable for use in a wide range of power applications.