The NOIP1SN1300A-QTI is a high-performance, low-leakage, and low-noise N-channel MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including power management, motor control, and battery protection circuits.
The NOIP1SN1300A-QTI is an N-channel MOSFET with a drain-source voltage (Vds) of -30V and a continuous drain current (Id) of 1.3A. It has a low input capacitance and low on-state resistance, making it ideal for use in low-voltage, low-power applications. The device is available in a compact, surface-mount TO-263-3 package, which is suitable for use in space-constrained applications.
The NOIP1SN1300A-QTI is suitable for use in a wide range of applications, including:
In summary, the NOIP1SN1300A-QTI is a high-performance, low-leakage, and low-noise N-channel MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including power management, motor control, and battery protection circuits. Its low input capacitance and low on-state resistance make it ideal for use in low-voltage, low-power applications, and its compact, surface-mount package makes it suitable for use in space-constrained applications.
Download datasheets and manufacturer documentation for NOIP1SN1300A-QTI