onsemi_NOIP1SN2000A-QTI

onsemi
NOIP1SN2000A-QTI  
Image Sensors, Camera

onsemi
NOIP1SN2000A-QTI
532-NOIP1SN2000A-QTI
Ersa
onsemi-NOIP1SN2000A-QTI-datasheets-11993848.pdf
IC IMAGE SENSOR 2MP LVDS 84LCC
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NOIP1SN2000A-QTI Description

The NOIP1SN2000A-QTI is a high voltage, high current N-channel MOSFET from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The NOIP1SN2000A-QTI is an N-channel MOSFET with a drain-source voltage (VDS) of up to 1000V and a continuous drain current (ID) of up to 2A. It features a low on-state resistance (RDS(on)) of 4.5 milliohms maximum, which helps to minimize power dissipation and improve efficiency in power electronic circuits.

Features:

  • High voltage and current capability: The device can handle high voltage and current levels, making it suitable for use in a wide range of power electronic applications.
  • Low on-state resistance: The low RDS(on) value helps to minimize power dissipation and improve efficiency in power electronic circuits.
  • High switching speed: The device has a fast switching speed, which helps to reduce switching losses and improve overall system performance.
  • Robust protection features: The MOSFET includes built-in protection features such as over-voltage, over-current, and over-temperature protection to help ensure reliable operation in demanding power electronic applications.

Applications:

The NOIP1SN2000A-QTI is suitable for use in a variety of power electronic applications, including:

  • Motor control: The device can be used in motor control circuits to efficiently control the speed and torque of motors in industrial and automotive applications.
  • Power supplies: The MOSFET can be used in power supply circuits to efficiently convert and regulate power for a variety of electronic devices.
  • Renewable energy systems: The device can be used in renewable energy systems, such as solar panels and wind turbines, to efficiently convert and regulate power for use in homes and businesses.

Overall, the NOIP1SN2000A-QTI is a high-performance N-channel MOSFET that offers high voltage and current capability, low on-state resistance, and robust protection features, making it an excellent choice for a wide range of power electronic applications.

Tech Specifications

Pixel Size - W x H
Pixel Size
Module/IC Classification
PPAP
Frames per Second
Product Status
Automotive
RoHS
Supplier Package
Package / Case
Voltage - Supply
REACH Status
Maximum Operating Supply Voltage (V)
EU RoHS
MSL Temp (°C)
Moisture Sensitivity Level (MSL)
Status
Operating Temperature
Pixel Size (µm)
Color
Shutter Type
ECCN
Image Size
Standard Package Name
MSL Type
Pin Count
Optical Format
Mounting
Moisture Sensitive
Megapixels
Image Size Range (Pixels)
Typical Operating Supply Voltage (V)
HTSUS
Package
USHTS
Resolution
Case Outline
PCB changed
HTS
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Image Size (Pixels)
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
Maximum Operating Temperature
RoHS Status
Output Interface
Color Sensing
Pixel Size (um)
Package Length
Series
Type
Number of frames per second
Frame Rate (fps)
Operating Supply Voltage
Part Status
Package Width
Active Pixel Array
Base Product Number
Minimum Operating Supply Voltage (V)

NOIP1SN2000A-QTI Documents

Download datasheets and manufacturer documentation for NOIP1SN2000A-QTI

Ersa NOIP1SN5000A, NOIP1SN2000A      
Ersa NOIP1SN5000A, NOIP1SN2000A      
Ersa Python Dev Datasheet Chg 23/May/2018       PYTHON Family 27/Jul/2017      
Ersa Material Declaration NOIP1SN2000A-QTI       onsemi RoHS       onsemi REACH      

Shopping Guide

Payment Methods
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service