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NRVB130LSFT1G  

Single Diodes

The NRVB130LSFT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. Here is a brief description of the model, its features, and applications:

Description:

The NRVB130LSFT1G is a high-performance N-channel MOSFET designed for a wide range of applications that require efficient power management and control. It is a discrete semiconductor device that uses a metal-oxide-semiconductor structure to amplify or switch electronic signals.

Features:

1. High Voltage Rating: The device is designed to handle high voltages, making it suitable for applications that require robust voltage handling capabilities.

2. Low On-State Resistance: This MOSFET has a low on-state resistance (RDS(on)), which minimizes power dissipation and improves efficiency during operation.

3. High Switching Speed: The NRVB130LSFT1G is designed for fast switching applications, allowing for quick transitions between on and off states.

4. Integrated Diode: The device features an integrated diode, which provides protection against reverse-voltage scenarios.

5. Low Gate Charge: This feature reduces the amount of charge required to fully turn on the MOSFET, which is beneficial for applications where energy efficiency is critical.

6. Thermal Protection: The device includes thermal shutdown protection to prevent damage due to overheating.

7. Surface-Mount Package: The NRVB130LSFT1G comes in a surface-mount package, which is compact and suitable for use in densely populated circuit boards.

Applications:

1. Motor Control: The high voltage and current handling capabilities make this MOSFET suitable for controlling the speed and direction of electric motors in various applications, such as industrial machinery and automotive systems.

2. Power Supplies: The NRVB130LSFT1G can be used in power supply applications, such as switching power supplies and battery chargers, due to its efficiency and high voltage rating.

3. Inverters: In renewable energy systems, such as solar panel installations, this MOSFET can be used in the inverter stage to convert DC power to AC power.

4. Industrial Control Systems: The device's robustness and efficiency make it suitable for use in industrial control systems, where reliable and efficient power management is critical.

5. Automotive Applications: The NRVB130LSFT1G can be used in various automotive applications, such as window lifts, seat adjusters, and other power control systems.

6. Telecommunications: In telecommunications equipment, this MOSFET can be used for power management and signal switching in high-voltage environments.

Please note that the specific features and applications may vary depending on the actual datasheet and product specifications provided by ON Semiconductor. It is always recommended to consult the datasheet for detailed information on the device's electrical characteristics, operating conditions, and other relevant specifications.

NRVB130LSFT1G Documents

Download datasheets and manufacturer documentation for NRVB130LSFT1G

PCN Assembly/Origin :

Mult Dev ASSY 07/Sep/2023      

Datasheets :

MBR130LSF1      

PCN Packaging :

MPN Label Update 08/Sep/2021       MPN label update 11/Oct/2021      

HTML Datasheet :

MBR130LSF1      

PCN Design/Specification :

NRVB130LSFT1G 17/Jul/2023       SOD-123FL Date Change 16/Oct/2023      

Environmental Information :

Material Declaration NRVB130LSFT1G       onsemi RoHS       onsemi REACH