onsemi

NRVB2045MFST3G

The NRVB2045MFST3G is a high voltage, high current MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The NRVB2045MFST3G is an N-channel MOSFET with a drain-source voltage (Vds) of up to 200V and a continuous drain current (Id) of up to 45A. It features a low on-state resistance (Rds(on)) of 35mΩ max, which helps to minimize power dissipation and improve efficiency in power conversion applications.

Features:

• High voltage and current ratings: The NRVB2045MFST3G is designed to handle high voltage and current loads, making it suitable for use in a wide range of power electronic applications.
• Low on-state resistance: The low Rds(on) of the NRVB2045MFST3G helps to minimize power dissipation and improve efficiency in power conversion applications.
• High switching speed: The NRVB2045MFST3G has a fast switching speed, which helps to reduce switching losses and improve overall system performance.
• Integrated gate driver: The NRVB2045MFST3G includes an integrated gate driver, which simplifies the design of power electronic systems and reduces the number of external components required.

Applications:

The NRVB2045MFST3G is suitable for use in a variety of power electronic applications, including:

• Motor control: The high voltage and current ratings of the NRVB2045MFST3G make it well-suited for use in motor control applications, such as in industrial automation and robotics.
• Power supplies: The NRVB2045MFST3G can be used in power supply applications, such as in power adapters and chargers for consumer electronics.
• Renewable energy systems: The NRVB2045MFST3G can be used in renewable energy systems, such as solar panel inverters and wind turbine converters, to help convert and manage the power generated by these systems.

Overall, the NRVB2045MFST3G is a high-performance MOSFET transistor that offers high voltage and current ratings, low on-state resistance, and fast switching speeds, making it suitable for use in a wide range of power electronic applications.