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NRVBA160NT3G  

Single Diodes

The NRVBA160NT3G is a power transistor manufactured by ON Semiconductor. It is a high-power, high-voltage transistor that is designed for use in a variety of applications, including power switching and amplification.

Description:

The NRVBA160NT3G is a Darlington transistor, which means it consists of two bipolar junction transistors (BJTs) connected in such a way that the output of the first transistor is connected to the input of the second transistor. This configuration allows the transistor to provide a high current gain and a high voltage gain.

Features:

• Collector-emitter voltage (Vce): 160V
• Collector-base voltage (Vcb): 200V
• Emitter-base voltage (Veb): 5V
• Continuous collector current (Ic): 2A
• Total device dissipation (Pd): 40W
• Storage temperature range: -65°C to +150°C
• Lead-free finish

Applications:

The NRVBA160NT3G is suitable for use in a variety of applications, including:

• Power switching and amplification
• Motor control
• Audio amplifiers
• Power supplies
• Industrial control systems

In summary, the NRVBA160NT3G is a high-power, high-voltage Darlington transistor that is well-suited for use in a variety of power switching and amplification applications. Its high current and voltage gains make it an ideal choice for applications that require high power and high voltage.

NRVBA160NT3G Documents

Download datasheets and manufacturer documentation for NRVBA160NT3G

PCN Assembly/Origin :

Mult Dev ASSY 07/Sep/2023      

Datasheets :

MBRA160T3G, NRVBA160T3G      

HTML Datasheet :

MBRA160T3G, NRVBA160T3G      

Environmental Information :

onsemi RoHS       onsemi REACH