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NRVBA340NT3G

The NRVBA340NT3G is a high-voltage, high-power MOSFET transistor produced by ON Semiconductor. It is designed for use in a variety of applications, including motor control, power conversion, and power management.

Description:

The NRVBA340NT3G is an N-channel MOSFET transistor with a breakdown voltage (V_DSS) of 340V. It has a continuous drain current (I_D) of 6.6A and a pulsed drain current (I_D_M) of 34A. The device has a low on-state resistance (R_DS(ON)) of 55 mOhm max, which helps to minimize power dissipation and improve efficiency.

Features:

• High breakdown voltage (V_DSS) of 340V
• Continuous drain current (I_D) of 6.6A
• Pulsed drain current (I_D_M) of 34A
• Low on-state resistance (R_DS(ON)) of 55 mOhm max
• High input impedance
• Fast switching speed
• Low gate charge
• Avalanche rugged

Applications:

The NRVBA340NT3G is suitable for use in a variety of applications, including:

• Motor control for industrial and automotive applications
• Power conversion and power management in battery-powered devices
• High-voltage power supplies
• Switch mode power supplies (SMPS)
• Class D audio amplifiers
• High-voltage motor drivers

In summary, the NRVBA340NT3G is a high-voltage, high-power MOSFET transistor that offers excellent performance and reliability in a wide range of applications. Its high breakdown voltage, low on-state resistance, and fast switching speed make it an ideal choice for motor control, power conversion, and power management applications.