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NRVBAF360T3G

The NRVBAF360T3G is a high-voltage, high-power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications that require high voltage and high current handling capabilities.

Description:

The NRVBAF360T3G is an N-channel MOSFET transistor with a drain-source voltage (VDS) of 360 volts and a continuous drain current (ID) of 90A. It is available in a TO-247AC package, which is suitable for high-power applications.

Features:

• High voltage and current handling capabilities
• N-channel MOSFET design
• Low on-state resistance (RDS(on))
• High switching speed
• Suitable for use in a wide range of applications

Applications:

The NRVBAF360T3G is commonly used in a variety of high-power applications, including:

• Motor control
• Power supplies
• Inverters
• Battery management systems
• Industrial control systems
• Renewable energy systems

Overall, the NRVBAF360T3G is a high-performance MOSFET transistor that is well-suited for use in a wide range of high-power applications. Its high voltage and current handling capabilities, combined with its low on-state resistance and high switching speed, make it an ideal choice for demanding applications that require reliable and efficient power management.