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NRVTS12100PFST3G

Description:

The NRVTS12100PFST3G is a high voltage, high power MOSFET transistor manufactured by ON Semiconductor. It is a N-channel enhancement mode field effect transistor with a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 12.1A.

Features:

1. High Voltage and High Power: The NRVTS12100PFST3G is designed to handle high voltage and high power applications, making it suitable for use in power electronics and industrial control systems.
2. Low On-Resistance: The device has a low on-resistance (Rds(on)) of 4.5 mΩ, which helps to reduce power dissipation and improve efficiency in high current applications.
3. Fast Switching Speed: The NRVTS12100PFST3G has a fast switching speed, with a typical gate charge (Qg) of 44nC and a gate-source threshold voltage (Vgs(th)) of 2.5V to 4.5V.
4. Avalanche-Rated: The device is designed to withstand high energy pulses and is rated for avalanche energy of 75J.
5. Built-in Protection: The NRVTS12100PFST3G features built-in protection against over-voltage, over-current, and over-temperature conditions.

Applications:

1. Motor Control: The NRVTS12100PFST3G is commonly used in motor control applications, such as in electric vehicles, industrial machinery, and robotics.
2. Power Supplies: The device can be used in power supply applications, such as in switch mode power supplies (SMPS) and battery chargers.
3. Renewable Energy: The NRVTS12100PFST3G is suitable for use in renewable energy applications, such as in solar panel systems and wind turbines.
4. Industrial Control: The device can be used in various industrial control applications, such as in programmable logic controllers (PLCs) and motor drives.
5. Automotive: The NRVTS12100PFST3G is also used in automotive applications, such as in electric power steering systems and electric braking systems.