


onsemi
NSBA123JF3T5G
292-NSBA123JF3T5G
PDF Datasheet
PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 2.2 k, 47 k, SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL
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Responsible qualityTech Specifications
Package/Case
SOT-1123
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
hFE Min
80
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
NSBA123JF3T5G Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 254 mW Surface Mount SOT-1123
FAQ
Are there related or alternative parts for NSBA123JF3T5G?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What operating temperature range does NSBA123JF3T5G support?
What voltage specification is listed for NSBA123JF3T5G?
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