German
Japanese
Portuguese
Korea
Mexico
Dutch
onsemi
NSBA123TF3T5G
292-NSBA123TF3T5G
PDF Datasheet
PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 2.2 k, none, SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL
10 Weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
SOT-1123
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
hFE Min
160
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
NSBA123TF3T5G Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 254 mW Surface Mount SOT-1123
FAQ
What voltage specification is listed for NSBA123TF3T5G?
The listed voltage-related specification for NSBA123TF3T5G is 50V.
What operating temperature range does NSBA123TF3T5G support?
What is NSBA123TF3T5G?
Is NSBA123TF3T5G currently in stock?
What is the standard lead time for NSBA123TF3T5G?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
