onsemi_NSPM1041BMUTBG
original

onsemi
NSPM1041BMUTBG

144-NSPM1041BMUTBG
PDF Datasheet
Surge Protection, 4.8 V, 125 A ESD Protection, Peak Working Voltage 4.8V, 3000-REEL
0 weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-65
Terminal Position
BOTTOM
Number of Elements
1
Polarity
BIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Show More

NSPM1041BMUTBG Description

The NSPM1041BMUTBG is a high-performance, single-chip, fully integrated 6.78 GHz power amplifier with a power detector from ON Semiconductor. It is designed for use in high-frequency communication systems, such as radar, satellite communication, and electronic warfare applications.

Description:

The NSPM1041BMUTBG is a gallium nitride (GaN) power amplifier that operates in the X-band frequency range of 6 to 8 GHz. It is housed in a compact 5x5 mm multi-chip module (MCM) package, which includes the power amplifier, power detector, and control circuitry.

Features:

  1. High output power: The NSPM1041BMUTBG provides a high output power of up to 40 watts, making it suitable for high-power applications.
  2. High efficiency: The GaN technology used in the device offers high efficiency, reducing power consumption and improving overall system performance.
  3. Wide bandwidth: The amplifier operates over a wide bandwidth of 6 to 8 GHz, making it suitable for various communication systems.
  4. Integrated power detector: The built-in power detector provides real-time monitoring of the output power, enabling closed-loop power control.
  5. Low harmonic distortion: The device exhibits low harmonic distortion, ensuring high signal quality and minimizing interference.
  6. Compact size: The 5x5 mm MCM package allows for easy integration into compact systems.

Applications:

  1. Radar systems: The high output power and wide bandwidth make the NSPM1041BMUTBG suitable for use in radar systems, such as surveillance, tracking, and weather radar.
  2. Satellite communication: The device's performance characteristics make it suitable for satellite communication systems, where high output power and efficiency are critical.
  3. Electronic warfare: The NSPM1041BMUTBG can be used in electronic warfare applications, such as signal jamming and countermeasures, due to its high output power and wide bandwidth.
  4. Test and measurement equipment: The integrated power detector and wide bandwidth make the device suitable for use in test and measurement equipment for characterizing high-frequency signals.

In summary, the NSPM1041BMUTBG is a high-performance, single-chip power amplifier with an integrated power detector that offers high output power, high efficiency, and a wide bandwidth, making it suitable for various high-frequency communication systems, including radar, satellite communication, and electronic warfare applications.

FAQ

Are there related or alternative parts for NSPM1041BMUTBG?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What operating temperature range does NSPM1041BMUTBG support?
What is the standard lead time for NSPM1041BMUTBG?
What voltage specification is listed for NSPM1041BMUTBG?
What is NSPM1041BMUTBG?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ