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NSR0230P2T5G

The NSR0230P2T5G is a high voltage, low side N-channel MOSFET from ON Semiconductor. It is designed for use in a variety of power switching applications, including motor control, power supplies, and battery management systems.

Description:

The NSR0230P2T5G is a N-channel MOSFET that features a drain-source voltage (VDS) of 55V, a continuous drain current (ID) of 23A, and a pulse drain current (IDSM) of 65A. It also has a low on-state resistance (RDS(on)) of 35mΩ max, which helps to minimize power dissipation and improve efficiency.

Features:

• High voltage, low side N-channel MOSFET
• VDS of 55V
• ID of 23A
• IDSM of 65A
• RDS(on) of 35mΩ max
• Low gate charge for fast switching
• Logic level gate drive compatible
• Avalanche energy capable

Applications:

• Motor control
• Power supplies
• Battery management systems
• Industrial control
• Automotive applications

The NSR0230P2T5G is a high performance MOSFET that offers high efficiency and fast switching in a variety of power switching applications. Its low on-state resistance and low gate charge make it an ideal choice for applications that require high efficiency and fast switching. Additionally, its high avalanche energy capability makes it suitable for use in applications that may experience high voltage transients.