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NSR0530P2T5G

The NSR0530P2T5G is a high voltage, high power MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including motor control, power supplies, and power conversion systems.

Description:

The NSR0530P2T5G is a N-channel MOSFET with a drain-source voltage (VDS) of 55V, a continuous drain current (ID) of 2.5A, and a pulsed drain current (IDSM) of 30A. It has a low on-state resistance (RDS(on)) of 40 milliohms maximum, which helps to minimize power dissipation and improve efficiency. The device also features a fast switching speed, with a typical gate charge (Qg) of 34nC and a gate-source threshold voltage (VGS(th)) of 2.5V minimum.

Features:

• High voltage, high power MOSFET
• Drain-source voltage (VDS) of 55V
• Continuous drain current (ID) of 2.5A
• Pulsed drain current (IDSM) of 30A
• Low on-state resistance (RDS(on)) of 40 milliohms maximum
• Fast switching speed with a typical gate charge (Qg) of 34nC
• Gate-source threshold voltage (VGS(th)) of 2.5V minimum

Applications:

• Motor control
• Power supplies
• Power conversion systems
• Industrial control
• Automotive applications
• Any application that requires high voltage and high power handling capabilities

Note: The above information is based on the datasheet and other technical documents available for the NSR0530P2T5G. It is important to verify the suitability of the device for a specific application by reviewing the datasheet and consulting with the manufacturer.