onsemi_NSS12100M3T5G
original

onsemi
NSS12100M3T5G

276-NSS12100M3T5G
PDF Datasheet
PNP BJT, 12V, 1A, Low VCE(sat), SOT-723
8 Weeks

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Tech Specifications

Package/Case
SOT-723-3
Collector Base Voltage (VCBO)
12V
Collector Emitter Breakdown Voltage
12V
Collector Emitter Saturation Voltage
-35mV
Collector Emitter Voltage (VCEO)
12V
Collector-emitter Voltage-Max
410mV
Emitter Base Voltage (VEBO)
5V
Halogen Free
Halogen Free
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NSS12100M3T5G Description

NSS12100M3T5G Description

The NSS12100M3T5G from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for low-voltage, high-current switching and amplification applications. Encased in a compact SOT-723 surface-mount package, this transistor offers a collector-emitter breakdown voltage (Vce) of 12V and a maximum collector current (Ic) of 1A, making it suitable for power-efficient designs. With a low Vce saturation voltage of 410mV at 1A, it ensures minimal power loss, enhancing energy efficiency in demanding circuits. Its DC current gain (hFE) of 120 at 500mA provides reliable signal amplification, while the ultra-low collector cutoff current (ICBO) of 100nA minimizes leakage in standby modes.

NSS12100M3T5G Features

  • High Current Handling: Supports up to 1A continuous collector current for robust performance in power applications.
  • Low Saturation Voltage: 410mV @ 1A reduces heat dissipation and improves efficiency.
  • Optimized Gain: hFE of 120 @ 500mA, 2V ensures stable amplification.
  • Compact & Reliable: SOT-723 package (Tape & Reel) enables high-density PCB layouts, compliant with ROHS3 and REACH standards.
  • Low Leakage: 100nA max ICBO enhances power savings in battery-operated devices.
  • Wide Operating Range: Suitable for 12V systems with a 625mW power dissipation limit.

NSS12100M3T5G Applications

Ideal for:

  • Load Switching: Efficiently drives relays, LEDs, or motors in portable electronics and IoT devices.
  • Power Management: Used in voltage regulators and DC-DC converters due to low saturation losses.
  • Signal Amplification: Enhances audio and sensor signals in consumer electronics (e.g., headphones, wearables).
  • Automotive Systems: Suitable for low-voltage auxiliary circuits where space and efficiency are critical.

Conclusion of NSS12100M3T5G

The NSS12100M3T5G stands out for its balance of current capacity, low saturation voltage, and compact form factor, making it a superior choice for modern electronics requiring efficiency and miniaturization. Its high gain, low leakage, and compliance with environmental standards ensure reliability in diverse applications, from consumer gadgets to automotive subsystems. Engineers will appreciate its onsemi-quality construction and performance consistency in high-volume production.

FAQ

Does NSS12100M3T5G have quantity-based pricing?
Yes. NSS12100M3T5G currently has 3 pricing tier(s), starting from 1 units.
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What package or case is NSS12100M3T5G available in?
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What is NSS12100M3T5G?
Availability (In Stock : 39 )
Quantity Unit Price Ext. Price
1+ $0.97543 $0.98
10+ $0.79543 $7.95
30+ $0.70457 $21.14
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