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NSS1C200LT1G
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NSS1C200LT1G Description
The NSS1C200LT1G is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.
Description:
The NSS1C200LT1G is an N-channel MOSFET transistor with a drain-to-source voltage (VDS) of 200V and a continuous drain current (ID) of 4.3A. It has a low on-state resistance (RDS(on)) of 4.5mOhm max, which allows for efficient power transfer with minimal power loss. The device also features a low input capacitance (Ciss) of 830pF max, which allows for fast switching times and improved overall system performance.
Features:
- High voltage N-channel MOSFET transistor
- Drain-to-source voltage (VDS) of 200V
- Continuous drain current (ID) of 4.3A
- Low on-state resistance (RDS(on)) of 4.5mOhm max
- Low input capacitance (Ciss) of 830pF max
- Avalanche energy capable
- Built-in body diode for efficient energy transfer
Applications:
The NSS1C200LT1G is suitable for use in a variety of power electronic applications, including:
- Motor control
- Power supplies
- Energy management systems
- Battery management systems
- Industrial control systems
- Automotive applications
Overall, the NSS1C200LT1G is a high-performance MOSFET transistor that offers efficient power transfer, fast switching times, and a range of features that make it suitable for a wide range of power electronic applications.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.31168 | $1.56 |
| 50+ | $0.25451 | $12.73 |
| 150+ | $0.23000 | $34.50 |
| 500+ | $0.18035 | $90.18 |



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