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NSS1C200LT1G

The NSS1C200LT1G is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The NSS1C200LT1G is an N-channel MOSFET transistor with a drain-to-source voltage (VDS) of 200V and a continuous drain current (ID) of 4.3A. It has a low on-state resistance (RDS(on)) of 4.5mOhm max, which allows for efficient power transfer with minimal power loss. The device also features a low input capacitance (Ciss) of 830pF max, which allows for fast switching times and improved overall system performance.

Features:

• High voltage N-channel MOSFET transistor
• Drain-to-source voltage (VDS) of 200V
• Continuous drain current (ID) of 4.3A
• Low on-state resistance (RDS(on)) of 4.5mOhm max
• Low input capacitance (Ciss) of 830pF max
• Avalanche energy capable
• Built-in body diode for efficient energy transfer

Applications:

The NSS1C200LT1G is suitable for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Energy management systems
• Battery management systems
• Industrial control systems
• Automotive applications

Overall, the NSS1C200LT1G is a high-performance MOSFET transistor that offers efficient power transfer, fast switching times, and a range of features that make it suitable for a wide range of power electronic applications.