onsemi_NSS1C301ET4G
original

onsemi
NSS1C301ET4G

276-NSS1C301ET4G
PDF Datasheet
3 A, 100 V Low VCE(sat) NPN Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
10 Weeks

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Tech Specifications

Package/Case
DPAK
Collector Base Voltage (VCBO)
140V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
115mV
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
3A
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
120MHz
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NSS1C301ET4G Description

NSS1C301ET4G Description

The NSS1C301ET4G is a high-performance NPN Bipolar Junction Transistor (BJT) designed and manufactured by onsemi. This device is part of the Single Bipolar Transistors category and offers a range of technical specifications that make it suitable for various applications. With a frequency transition of 120MHz, it ensures fast switching capabilities, while its maximum collector current (Ic) of 3A provides ample current handling capacity. The NSS1C301ET4G also boasts a low Vce saturation of 250mV at 300mA and 3A, which contributes to its high efficiency in power management.

NSS1C301ET4G Features

  • High Frequency Transition: With a frequency transition of 120MHz, the NSS1C301ET4G is capable of handling high-speed switching applications.
  • Robust Current Handling: The maximum collector current (Ic) of 3A allows the device to manage significant current loads.
  • Low Vce Saturation: A low Vce saturation of 250mV at 300mA and 3A ensures high efficiency and low power dissipation.
  • Surface Mount Technology: The device is designed for surface mount, making it suitable for modern, compact electronic designs.
  • Active Product Status: As an active product, the NSS1C301ET4G is readily available and supported by onsemi.
  • Wide Voltage Range: Capable of handling a maximum collector-emitter breakdown voltage of 100V, it is suitable for high-voltage applications.
  • High Power Rating: The maximum power rating of 2.1W allows the device to handle power-intensive tasks.
  • Compliance: The NSS1C301ET4G is compliant with ROHS3 regulations and is unaffected by REACH regulations, making it an environmentally friendly choice.

NSS1C301ET4G Applications

The NSS1C301ET4G is ideal for applications that require high current handling, high-speed switching, and high efficiency. Some specific use cases include:

  • Power Amplifiers: Due to its high current and power ratings, the NSS1C301ET4G is well-suited for power amplifiers in audio and communication systems.
  • Switching Regulators: The low Vce saturation and high frequency transition make it an excellent choice for switching regulators in power supply designs.
  • Automotive Electronics: The device's ability to handle high voltages and currents makes it suitable for various automotive electronic systems, such as engine control units and lighting systems.
  • Industrial Control Systems: Its robustness and reliability make it a good fit for industrial control systems that require high current and voltage handling capabilities.

Conclusion of NSS1C301ET4G

The NSS1C301ET4G from onsemi is a versatile and high-performing NPN Bipolar Transistor that offers a unique combination of high current handling, fast switching capabilities, and low power dissipation. Its compliance with environmental regulations and active product status make it an attractive choice for a wide range of applications in the electronics industry, from power amplifiers to automotive electronics. With its robust specifications and onsemi's reputation for quality, the NSS1C301ET4G is a reliable component for demanding electronic designs.

FAQ

Is NSS1C301ET4G currently in stock?
Yes. NSS1C301ET4G currently shows 265 unit(s) in stock.
What package or case is NSS1C301ET4G available in?
What voltage specification is listed for NSS1C301ET4G?
What is the standard lead time for NSS1C301ET4G?
Does NSS1C301ET4G have quantity-based pricing?
Availability (In Stock : 265 )
Quantity Unit Price Ext. Price
1+ $0.40972 $0.41
10+ $0.40285 $4.03
30+ $0.39772 $11.93
100+ $0.39257 $39.26
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