onsemi_NSS20200LT1G
original

onsemi
NSS20200LT1G

276-NSS20200LT1G
PDF Datasheet
PNP BJT Transistor, -20V, -2A, 100MHz, SOT-23
15 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
-130mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
180mV
Emitter Base Voltage (VEBO)
7V
Frequency
100MHz
Show More

NSS20200LT1G Description

NSS20200LT1G Description

The NSS20200LT1G is a high-performance PNP bipolar transistor offered by onsemi, designed to meet the demanding requirements of modern electronic systems. This device boasts a robust 20V collector-emitter breakdown voltage and can handle a maximum collector current of 2A, making it an ideal choice for applications that require high power and voltage handling capabilities. With a frequency transition of 100MHz, the NSS20200LT1G ensures reliable operation in high-speed circuits.

NSS20200LT1G Features

  • PNP Transistor Type: Offers high current gain and low noise, making it suitable for a wide range of applications.
  • 100MHz Frequency Transition: Ensures reliable performance in high-speed circuits.
  • 2A Maximum Collector Current: Provides high power handling capabilities for demanding applications.
  • 20V Collector-Emitter Breakdown Voltage: Allows for safe operation in high-voltage circuits.
  • Surface Mount Package: Facilitates easy integration into modern electronic systems.
  • Active Product Status: Ensures ongoing availability and support from onsemi.
  • REACH Unaffected and RoHS3 Compliant: Demonstrates onsemi's commitment to environmental responsibility.

NSS20200LT1G Applications

The NSS20200LT1G is an excellent choice for various applications due to its high power and voltage handling capabilities, as well as its high-frequency performance. Some ideal use cases for this device include:

  1. Power Amplifiers: The high current and voltage ratings make it suitable for power amplifiers in audio systems.
  2. Switching Applications: The high-frequency transition and low saturation voltage make it ideal for switching applications in power supplies and motor controls.
  3. RF Amplifiers: The 100MHz frequency transition allows for use in RF amplifiers for communication systems.
  4. Automotive Electronics: The high power and voltage ratings, along with the automotive-grade package, make it suitable for automotive electronics applications.

Conclusion of NSS20200LT1G

The NSS20200LT1G from onsemi is a versatile and high-performance PNP bipolar transistor that offers a unique combination of high power, voltage, and frequency capabilities. Its surface mount package and compliance with environmental regulations make it an ideal choice for a wide range of applications, including power amplifiers, switching applications, RF amplifiers, and automotive electronics. With its robust performance and ongoing support from onsemi, the NSS20200LT1G is a reliable choice for designers looking to enhance the performance of their electronic systems.

FAQ

What is NSS20200LT1G?
NSS20200LT1G is a Single Bipolar Transistors from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
Is NSS20200LT1G currently in stock?
What is the standard lead time for NSS20200LT1G?
What package or case is NSS20200LT1G available in?
What operating temperature range does NSS20200LT1G support?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ