onsemi_NSS20201LT1G

onsemi
NSS20201LT1G  
Single Bipolar Transistors

onsemi
NSS20201LT1G
276-NSS20201LT1G
Ersa
onsemi-NSS20201LT1G-datasheets-11052568.pdf
TRANS NPN 20V 2A SOT23-3
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    NSS20201LT1G Description

    NSS20201LT1G Description

    The NSS20201LT1G is a high-performance NPN transistor designed and manufactured by onsemi. This single Bipolar Transistor features a 150MHz frequency transition, making it ideal for high-speed switching applications. With a maximum collector current of 2A and a collector-emitter breakdown voltage of 20V, the NSS20201LT1G delivers exceptional performance in various power and signal amplification applications.

    NSS20201LT1G Features

    • High Frequency Transition: The NSS20201LT1G boasts a 150MHz frequency transition, ensuring fast switching and high-speed signal processing capabilities.
    • Robust Current Handling: Capable of handling up to 2A of collector current, this NPN transistor is well-suited for demanding power amplification applications.
    • Low Saturation Voltage: With a maximum Vce saturation of 100mV at 200mA and 2A, the NSS20201LT1G offers efficient operation and reduced power dissipation.
    • Surface Mount Technology: The SOT23-3 package allows for easy integration into surface mount applications, providing a compact and reliable solution.
    • Compliance and Certification: The NSS20201LT1G is REACH unaffected, RoHS3 compliant, and classified under EAR99, making it suitable for a wide range of applications without regulatory concerns.

    NSS20201LT1G Applications

    The NSS20201LT1G is an ideal choice for various applications where high-speed switching and power amplification are required. Some specific use cases include:

    1. Audio Amplifiers: The high-frequency transition and low saturation voltage make the NSS20201LT1G suitable for audio amplifiers, ensuring clear and distortion-free sound reproduction.
    2. Power Management: With its robust current handling capabilities, the NSS20201LT1G is well-suited for power management applications, such as battery charging and voltage regulation.
    3. Automotive Electronics: The NSS20201LT1G's ability to handle high currents and voltages makes it an excellent choice for automotive electronics, including ignition systems and power window controls.

    Conclusion of NSS20201LT1G

    In conclusion, the NSS20201LT1G is a versatile and high-performance NPN transistor that offers a combination of high-frequency transition, robust current handling, and low saturation voltage. Its surface mount package and compliance with various regulations make it an ideal choice for a wide range of applications, including audio amplifiers, power management, and automotive electronics. With its unique features and advantages over similar models, the NSS20201LT1G is a reliable and efficient solution for demanding electronic systems.

    Tech Specifications

    Configuration
    PPAP
    Maximum Base Emitter Saturation Voltage (V)
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Automotive
    Supplier Package
    Transistor Type
    Package / Case
    REACH Status
    Maximum Collector-Emitter Saturation Voltage (V)
    EU RoHS
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Collector Base Voltage (V)
    Frequency - Transition
    Current - Collector (Ic) (Max)
    ECCN
    Maximum Emitter Base Voltage (V)
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    Lead Shape
    HTSUS
    Package
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    Maximum Collector-Emitter Voltage (V)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Package Height
    Mfr
    RoHS Status
    Maximum Transition Frequency (MHz)
    Vce Saturation (Max) @ Ib, Ic
    Package Length
    Series
    Type
    Minimum DC Current Gain
    Maximum DC Collector Current (A)
    Power - Max
    Part Status
    Current - Collector Cutoff (Max)
    Package Width
    Maximum Collector Cut-Off Current (nA)
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Base Product Number
    Unit Weight
    Continuous Collector Current
    RoHS
    Maximum DC Collector Current
    Technology
    Collector-Emitter Saturation Voltage
    Collector- Base Voltage VCBO
    Height
    Maximum Operating Temperature
    DC Collector/Base Gain hfe Min
    Width
    Mounting Style
    Transistor Polarity
    Minimum Operating Temperature
    Emitter- Base Voltage VEBO
    Length
    Gain Bandwidth Product fT
    Collector- Emitter Voltage VCEO Max
    Pd - Power Dissipation
    USHTS

    NSS20201LT1G Documents

    Download datasheets and manufacturer documentation for NSS20201LT1G

    Ersa Mult Dev Assembly 15/Dec/2023      
    Ersa NSS20201LT1G      
    Ersa NSS20201LT1G      
    Ersa SOT23 16/Sep/2016      
    Ersa onsemi RoHS       Material Declaration NSS20201LT1G      

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