onsemi_NSS20300MR6T1G
original

onsemi
NSS20300MR6T1G

276-NSS20300MR6T1G
PNP BJT, 20V, 3A, 100MHz, TSOP, Low VCE(sat)
8 Weeks

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Tech Specifications

Package/Case
TSOP
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
320mV
Current Rating
-3A
Emitter Base Voltage (VEBO)
-6V
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NSS20300MR6T1G Description

NSS20300MR6T1G Description

The NSS20300MR6T1G, manufactured by onsemi, is a high-performance PNP single bipolar transistor designed for a wide range of applications. This device boasts a maximum collector-emitter breakdown voltage of 20V, a maximum collector current of 3A, and a power dissipation of 545mW. The NSS20300MR6T1G is available in a 6-pin TSOP package and is surface-mountable, making it ideal for space-constrained designs.

NSS20300MR6T1G Features

  • PNP Transistor Type: Offers high current gain and low noise, making it suitable for high-frequency applications.
  • 100MHz Transition Frequency: Enables high-speed switching and fast response times.
  • 3A Collector Current (Ic): Supports high-power applications and heavy current loads.
  • 20V Collector-Emitter Breakdown Voltage: Provides robust voltage handling capabilities.
  • 545mW Maximum Power Dissipation: Ensures reliable operation in high-power applications.
  • 6TSOP Package: Compact and surface-mountable, ideal for space-constrained designs.
  • 100mV Vce Saturation (Max) @ Ib, Ic: Delivers low saturation voltage for efficient power management.
  • 100 @ 1.5A, 2V DC Current Gain (hFE) (Min): Offers consistent performance across a wide range of operating conditions.
  • REACH Unaffected and RoHS3 Compliant: Ensures environmental compliance and regulatory adherence.

NSS20300MR6T1G Applications

The NSS20300MR6T1G is ideal for various applications where high current, high voltage, and high-speed performance are required. Some specific use cases include:

  1. Power Amplifiers: Utilize the high current and voltage capabilities for efficient power amplification.
  2. Switching Regulators: Benefit from the high transition frequency and low saturation voltage for fast, efficient switching.
  3. Motor Control: Leverage the high current and voltage ratings for reliable motor control in various industrial and automotive applications.
  4. RF Amplifiers: Take advantage of the high transition frequency for high-speed RF signal amplification.

Conclusion of NSS20300MR6T1G

The NSS20300MR6T1G is a versatile and high-performance PNP single bipolar transistor that offers a unique combination of high current, high voltage, and high-speed capabilities. Its compact 6TSOP package and surface-mount design make it ideal for space-constrained applications, while its robust performance specifications make it suitable for a wide range of high-power and high-frequency applications. With its REACH unaffected and RoHS3 compliant status, the NSS20300MR6T1G is an environmentally friendly choice for designers looking to meet regulatory requirements.

FAQ

What voltage specification is listed for NSS20300MR6T1G?
The listed voltage-related specification for NSS20300MR6T1G is 30V.
What is the standard lead time for NSS20300MR6T1G?
What operating temperature range does NSS20300MR6T1G support?
Is NSS20300MR6T1G currently in stock?
Are there related or alternative parts for NSS20300MR6T1G?
Availability (In Stock : 6471 )
Quantity Unit Price Ext. Price
5+ $0.30305 $1.52
50+ $0.26725 $13.36
150+ $0.25193 $37.79
500+ $0.23279 $116.39
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