onsemi_NSS20300MR6T1G
original

onsemi
NSS20300MR6T1G

276-NSS20300MR6T1G
PNP BJT, 20V, 3A, 100MHz, TSOP, Low VCE(sat)
8 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
TSOP
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
320mV
Current Rating
-3A
Emitter Base Voltage (VEBO)
-6V
Show More

NSS20300MR6T1G Description

NSS20300MR6T1G Description

The NSS20300MR6T1G, manufactured by onsemi, is a high-performance PNP single bipolar transistor designed for a wide range of applications. This device boasts a maximum collector-emitter breakdown voltage of 20V, a maximum collector current of 3A, and a power dissipation of 545mW. The NSS20300MR6T1G is available in a 6-pin TSOP package and is surface-mountable, making it ideal for space-constrained designs.

NSS20300MR6T1G Features

  • PNP Transistor Type: Offers high current gain and low noise, making it suitable for high-frequency applications.
  • 100MHz Transition Frequency: Enables high-speed switching and fast response times.
  • 3A Collector Current (Ic): Supports high-power applications and heavy current loads.
  • 20V Collector-Emitter Breakdown Voltage: Provides robust voltage handling capabilities.
  • 545mW Maximum Power Dissipation: Ensures reliable operation in high-power applications.
  • 6TSOP Package: Compact and surface-mountable, ideal for space-constrained designs.
  • 100mV Vce Saturation (Max) @ Ib, Ic: Delivers low saturation voltage for efficient power management.
  • 100 @ 1.5A, 2V DC Current Gain (hFE) (Min): Offers consistent performance across a wide range of operating conditions.
  • REACH Unaffected and RoHS3 Compliant: Ensures environmental compliance and regulatory adherence.

NSS20300MR6T1G Applications

The NSS20300MR6T1G is ideal for various applications where high current, high voltage, and high-speed performance are required. Some specific use cases include:

  1. Power Amplifiers: Utilize the high current and voltage capabilities for efficient power amplification.
  2. Switching Regulators: Benefit from the high transition frequency and low saturation voltage for fast, efficient switching.
  3. Motor Control: Leverage the high current and voltage ratings for reliable motor control in various industrial and automotive applications.
  4. RF Amplifiers: Take advantage of the high transition frequency for high-speed RF signal amplification.

Conclusion of NSS20300MR6T1G

The NSS20300MR6T1G is a versatile and high-performance PNP single bipolar transistor that offers a unique combination of high current, high voltage, and high-speed capabilities. Its compact 6TSOP package and surface-mount design make it ideal for space-constrained applications, while its robust performance specifications make it suitable for a wide range of high-power and high-frequency applications. With its REACH unaffected and RoHS3 compliant status, the NSS20300MR6T1G is an environmentally friendly choice for designers looking to meet regulatory requirements.

FAQ

Does NSS20300MR6T1G have quantity-based pricing?
Yes. NSS20300MR6T1G currently has 4 pricing tier(s), starting from 5 units.
Is NSS20300MR6T1G currently in stock?
What voltage specification is listed for NSS20300MR6T1G?
What is the standard lead time for NSS20300MR6T1G?
Are there related or alternative parts for NSS20300MR6T1G?
Availability (In Stock : 6471 )
Quantity Unit Price Ext. Price
5+ $0.30305 $1.52
50+ $0.26725 $13.36
150+ $0.25193 $37.79
500+ $0.23279 $116.39
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ