onsemi_NSS30100LT1G
original

onsemi
NSS30100LT1G

276-NSS30100LT1G
Low VCE(sat) Transistor, PNP, 30 V, 1.0 A, SOT-23 (TO-236) 3 LEAD, 3000-REEL
14 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
-50V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-650mV
Collector-emitter Voltage-Max
650mV
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
100MHz
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NSS30100LT1G Description

NSS30100LT1G Description

The NSS30100LT1G is a high-performance PNP bipolar transistor designed and manufactured by onsemi. It is a part of the Single Bipolar Transistors category and comes in a compact SOT23-3 package. This device is designed for applications requiring high frequency, high current, and low power consumption. With a maximum collector-emitter breakdown voltage of 30V and a maximum collector current of 1A, the NSS30100LT1G is suitable for a wide range of electronic circuits.

NSS30100LT1G Features

  • Frequency - Transition: 100MHz, ensuring fast switching and high-speed operation.
  • Current - Collector (Ic) (Max): 1A, providing high current handling capability.
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A, offering low saturation voltage for improved efficiency.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V, ensuring consistent performance.
  • Power - Max: 310mW, allowing for efficient power management in various applications.
  • Mounting Type: Surface Mount, facilitating easy integration into printed circuit boards.
  • RoHS Status: ROHS3 Compliant, adhering to environmental regulations.
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.

NSS30100LT1G Applications

The NSS30100LT1G is ideal for a variety of applications where high frequency, high current, and low power consumption are critical. Some specific use cases include:

  1. Audio Amplifiers: The high current and low saturation voltage make it suitable for driving speakers in audio systems.
  2. Switching Regulators: The high frequency and low power capabilities make it an excellent choice for power management circuits.
  3. RF Amplifiers: The 100MHz transition frequency allows for use in radio frequency applications.
  4. Motor Drivers: The high current handling capability makes it suitable for driving motors in various electronic devices.

Conclusion of NSS30100LT1G

The NSS30100LT1G is a versatile PNP bipolar transistor that offers a combination of high frequency, high current, and low power consumption. Its compact SOT23-3 package and surface mount design make it easy to integrate into a wide range of electronic circuits. With its unique features and advantages, the NSS30100LT1G is an excellent choice for applications requiring high performance and reliability.

FAQ

What is NSS30100LT1G?
NSS30100LT1G is a Single Bipolar Transistors from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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