onsemi

NST3946DP6T5G

NST3946DP6T5G Description

The NST3946DP6T5G is a Bipolar Transistor Array from onsemi, featuring NPN and PNP configurations with a maximum collector-emitter breakdown voltage of 40V and a maximum collector current (Ic) of 200mA. This surface-mount device is designed for high-frequency applications, with a transition frequency ranging from 200MHz to 250MHz. It is compliant with the RoHS3 standard and classified under the EAR99 Export Control Classification Number (ECCN), indicating its unrestricted export status.

NST3946DP6T5G Features

• High-Frequency Operation: With a transition frequency of up to 250MHz, the NST3946DP6T5G is ideal for applications requiring high-speed switching and signal amplification.
• Low Saturation Voltage: The device offers a low Vce saturation voltage of 300mV @ 5mA, 50mA and 400mV @ 5mA, 50mA, which is beneficial for power efficiency in low-voltage circuits.
• Surface Mount Technology: The surface mount design allows for compact and efficient integration into modern electronic devices.
• DC Current Gain: The minimum DC current gain (hFE) is 100 at 10mA, 1V, ensuring consistent performance across a range of operating conditions.
• Moisture Sensitivity Level (MSL) 1: This indicates that the device can be stored and handled without special precautions regarding moisture, making it suitable for a wide range of manufacturing environments.

NST3946DP6T5G Applications

The NST3946DP6T5G is well-suited for a variety of applications where high-speed switching and amplification are required, including:

• Automotive Electronics: For use in control systems and power management circuits within vehicles.
• Telecommunications: In signal processing and amplification circuits for high-speed data transmission.
• Industrial Control Systems: For reliable operation in environments with varying temperature and humidity conditions.
• Consumer Electronics: In audio and video equipment, where high-frequency signal processing is necessary.

Conclusion of NST3946DP6T5G

The NST3946DP6T5G stands out for its high-frequency capabilities, low saturation voltage, and RoHS compliance, making it a versatile choice for designers looking to incorporate high-speed, efficient, and reliable bipolar transistor arrays into their electronic devices. Its unique combination of performance benefits and compliance with environmental standards positions it as a preferred option in a competitive market.