The NST847BPDP6T5G is a Bipolar Transistor Array from onsemi, designed for high-frequency applications. It features a transition frequency of 100MHz, making it suitable for a wide range of electronic devices. With a maximum collector current (Ic) of 100mA and a collector-emitter breakdown voltage of 45V, this device offers excellent performance in demanding environments. The NST847BPDP6T5G is RoHS3 compliant and REACH unaffected, ensuring environmental safety and regulatory compliance.
NST847BPDP6T5G Features
High Frequency Operation: The NST847BPDP6T5G operates at a transition frequency of 100MHz, making it ideal for high-speed applications.
High Voltage and Current Ratings: With a maximum collector-emitter voltage of 45V and a maximum collector current of 100mA, this device can handle demanding power requirements.
Low Saturation Voltage: The Vce saturation voltage is as low as 600mV at 5mA and 100mA, ensuring efficient operation.
Surface Mount Packaging: The NST847BPDP6T5G is available in a surface mount package, facilitating easy integration into modern electronic devices.
DC Current Gain: The minimum DC current gain (hFE) is 200 at 2mA, 5V and 220 at 2mA, 5V, providing consistent performance.
Low Leakage Current: The maximum collector cutoff current (ICBO) is only 15nA, minimizing power consumption in standby modes.
NST847BPDP6T5G Applications
The NST847BPDP6T5G is ideal for a variety of applications, including:
Audio Amplifiers: Its high-frequency operation and low saturation voltage make it suitable for audio amplification circuits.
Switching Regulators: The device's ability to handle high voltages and currents makes it a good fit for switching regulator applications.
RF Amplifiers: The 100MHz transition frequency allows the NST847BPDP6T5G to be used in RF amplification circuits.
Automotive Electronics: The device's high voltage and current ratings, along with its low leakage current, make it suitable for automotive electronic systems.
Conclusion of NST847BPDP6T5G
The NST847BPDP6T5G is a versatile Bipolar Transistor Array from onsemi, offering high-frequency operation, high voltage and current ratings, and low saturation voltage. Its surface mount packaging and RoHS3 compliance make it suitable for a wide range of applications, from audio amplifiers to automotive electronics. With its unique combination of performance and environmental compliance, the NST847BPDP6T5G is an excellent choice for demanding electronic devices.
Tech Specifications
PCB changed
HTS
Maximum Collector-Emitter Voltage (V)
ECCN (US)
PPAP
Maximum Power Dissipation (mW)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Supplier Device Package
Automotive
Maximum Operating Temperature (°C)
Supplier Package
Transistor Type
Package / Case
REACH Status
Package Height
Mfr
EU RoHS
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
Frequency - Transition
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
ECCN
Package Length
Mounting Type
Standard Package Name
Pin Count
Mounting
Series
Type
Maximum DC Collector Current (A)
Lead Shape
Power - Max
Part Status
Current - Collector Cutoff (Max)
HTSUS
Package
Package Width
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Unit Weight
Configuration
RoHS
Maximum DC Collector Current
Technology
Collector-Emitter Saturation Voltage
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
Mounting Style
Transistor Polarity
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Length
Gain Bandwidth Product fT
DC Current Gain hFE Max
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
USHTS
NST847BPDP6T5G Documents
Download datasheets and manufacturer documentation for NST847BPDP6T5G
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Shipping Rate
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