onsemi_NST847BPDP6T5G
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onsemi
NST847BPDP6T5G

277-NST847BPDP6T5G
PDF Datasheet
45 V, 100 mA NPN PNP Bipolar Transistor, SOT-963 1x1, 0.35P, 8000-REEL
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Tech Specifications

Package/Case
SOT-963-6
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector-emitter Voltage-Max
600mV
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
100MHz
Lead Free
Lead Free
Max Breakdown Voltage
45V
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NST847BPDP6T5G Description

NST847BPDP6T5G Description

The NST847BPDP6T5G is a Bipolar Transistor Array from onsemi, designed for high-frequency applications. It features a transition frequency of 100MHz, making it suitable for a wide range of electronic devices. With a maximum collector current (Ic) of 100mA and a collector-emitter breakdown voltage of 45V, this device offers excellent performance in demanding environments. The NST847BPDP6T5G is RoHS3 compliant and REACH unaffected, ensuring environmental safety and regulatory compliance.

NST847BPDP6T5G Features

  • High Frequency Operation: The NST847BPDP6T5G operates at a transition frequency of 100MHz, making it ideal for high-speed applications.
  • High Voltage and Current Ratings: With a maximum collector-emitter voltage of 45V and a maximum collector current of 100mA, this device can handle demanding power requirements.
  • Low Saturation Voltage: The Vce saturation voltage is as low as 600mV at 5mA and 100mA, ensuring efficient operation.
  • Surface Mount Packaging: The NST847BPDP6T5G is available in a surface mount package, facilitating easy integration into modern electronic devices.
  • DC Current Gain: The minimum DC current gain (hFE) is 200 at 2mA, 5V and 220 at 2mA, 5V, providing consistent performance.
  • Low Leakage Current: The maximum collector cutoff current (ICBO) is only 15nA, minimizing power consumption in standby modes.

NST847BPDP6T5G Applications

The NST847BPDP6T5G is ideal for a variety of applications, including:

  1. Audio Amplifiers: Its high-frequency operation and low saturation voltage make it suitable for audio amplification circuits.
  2. Switching Regulators: The device's ability to handle high voltages and currents makes it a good fit for switching regulator applications.
  3. RF Amplifiers: The 100MHz transition frequency allows the NST847BPDP6T5G to be used in RF amplification circuits.
  4. Automotive Electronics: The device's high voltage and current ratings, along with its low leakage current, make it suitable for automotive electronic systems.

Conclusion of NST847BPDP6T5G

The NST847BPDP6T5G is a versatile Bipolar Transistor Array from onsemi, offering high-frequency operation, high voltage and current ratings, and low saturation voltage. Its surface mount packaging and RoHS3 compliance make it suitable for a wide range of applications, from audio amplifiers to automotive electronics. With its unique combination of performance and environmental compliance, the NST847BPDP6T5G is an excellent choice for demanding electronic devices.

FAQ

What package or case is NST847BPDP6T5G available in?
NST847BPDP6T5G is available in the SOT-963-6 package / case.
Is NST847BPDP6T5G currently in stock?
What operating temperature range does NST847BPDP6T5G support?
What is NST847BPDP6T5G?
Does NST847BPDP6T5G have quantity-based pricing?
Availability (In Stock : 11656 )
Quantity Unit Price Ext. Price
50+ $0.12553 $6.28
150+ $0.11833 $17.75
500+ $0.10936 $54.68
2500+ $0.10535 $263.38
5000+ $0.10295 $514.75
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