onsemi_NSV1C301ET4G-VF01
original

onsemi
NSV1C301ET4G-VF01

276-NSV1C301ET4G-VF01
PDF Datasheet
3 A, 100 V Low VCE(sat) NPN Transistor, 2500-REEL

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ISO9001
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ISO45001
ISO14001
Original

Tech Specifications

Number of Terminals
2
Terminal Position
SINGLE
Number of Elements
1
RoHS
Yes
Lead Free
Yes
REACH
not_compliant
Military Spec
False

NSV1C301ET4G-VF01 Description

NSV1C301ET4G-VF01 Description

The NSV1C301ET4G-VF01 is a high-performance NPN bipolar transistor designed and manufactured by onsemi. This device offers a unique combination of technical specifications and performance benefits that make it ideal for various applications. With a maximum collector-emitter breakdown voltage of 100V and a maximum collector current of 3A, this device is capable of handling high power and voltage requirements. The device is also designed for surface mount applications, making it suitable for modern electronic designs.

NSV1C301ET4G-VF01 Features

  • Frequency - Transition: 120MHz, ensuring high-speed operation in various applications.
  • Current - Collector (Ic) (Max): 3A, providing high current handling capabilities.
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A, ensuring low power dissipation.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V, offering consistent performance.
  • Power - Max: 2.1W, allowing for high power applications.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring reliable operation in various environmental conditions.
  • RoHS Status: ROHS3 Compliant, making it suitable for environmentally conscious designs.
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.

NSV1C301ET4G-VF01 Applications

The NSV1C301ET4G-VF01 is ideal for various applications due to its high power, voltage, and current handling capabilities. Some specific use cases include:

  1. Power Amplifiers: The high power and voltage ratings make this device suitable for power amplifier applications, where high current and voltage are required.
  2. Switching Applications: The low Vce saturation voltage and high current gain make this device ideal for switching applications, where low power dissipation and high efficiency are crucial.
  3. Automotive Electronics: The high voltage and current ratings, along with the moisture sensitivity level, make this device suitable for automotive electronics, where reliability and performance are essential.

Conclusion of NSV1C301ET4G-VF01

The NSV1C301ET4G-VF01 is a high-performance NPN bipolar transistor that offers a unique combination of technical specifications and performance benefits. Its high power, voltage, and current handling capabilities, along with its low power dissipation and high efficiency, make it ideal for various applications, including power amplifiers, switching applications, and automotive electronics. While the device is now considered obsolete, its unique features and advantages make it a valuable option for legacy designs and applications where high performance is required.

FAQ

What is NSV1C301ET4G-VF01?
NSV1C301ET4G-VF01 is a Single Bipolar Transistors from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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