onsemi

NSV2SC5658M3T5G

NSV2SC5658M3T5G Description

The NSV2SC5658M3T5G from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for low-power, high-frequency applications. Packaged in a compact SOT-723 surface-mount form factor, it offers a 50V collector-emitter breakdown voltage (Vce) and a 150mA maximum collector current (Ic), making it suitable for signal amplification and switching in space-constrained designs. With a transition frequency (fT) of 180MHz, it excels in RF and analog circuits requiring fast response times. The transistor boasts a low Vce saturation voltage of 400mV (@5mA, 50mA), ensuring efficient operation in saturated switching regimes. Compliant with ROHS3 and REACH standards, it is ideal for environmentally conscious applications.

NSV2SC5658M3T5G Features

• High-Speed Performance: 180MHz transition frequency enables robust operation in RF and high-frequency analog circuits.
• Low Saturation Voltage: 400mV @ 5mA, 50mA minimizes power loss in switching applications.
• Compact SOT-723 Package: Space-saving surface-mount design for high-density PCB layouts.
• High Current Gain (hFE): Minimum 120 @ 1mA, 6V ensures reliable amplification.
• Low Leakage Current: Collector cutoff current (ICBO) as low as 500nA enhances efficiency.
• Wide Operating Voltage: 50V Vce(max) supports diverse circuit requirements.
• Robust Reliability: MSL1 (Unlimited) moisture sensitivity and RoHS3/REACH compliance for industrial and consumer applications.

NSV2SC5658M3T5G Applications

• RF Amplification: Ideal for low-noise amplifiers (LNAs) and mixer stages in communication systems.
• High-Speed Switching: Suitable for load switching, pulse drivers, and digital logic interfaces.
• Portable Electronics: Power-efficient performance benefits battery-operated devices like wearables and IoT sensors.
• Automotive Systems: Used in infotainment, lighting control, and sensor interfaces due to its rugged design.
• Industrial Control: Reliable operation in PLCs, motor drivers, and signal conditioning circuits.

Conclusion of NSV2SC5658M3T5G

The NSV2SC5658M3T5G stands out for its high-speed performance, compact footprint, and low power dissipation, making it a versatile choice for modern electronics. Its optimized balance of gain, frequency, and saturation characteristics positions it above comparable NPN transistors in efficiency-critical applications. Whether in RF, automotive, or portable devices, this transistor delivers reliable performance under stringent operational demands. Engineers seeking a cost-effective, high-performance BJT for space-constrained designs will find this component indispensable.