onsemi
NSV40200LT1G  
Single Bipolar Transistors

onsemi
NSV40200LT1G
276-NSV40200LT1G
Ersa
onsemi-NSV40200LT1G-datasheets-2187866.pdf
TRANS PNP 40V 2A SOT23-3
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    NSV40200LT1G Description

    The NSV40200LT1G is a high voltage, high power MOSFET from ON Semiconductor. It is designed for use in a wide range of applications, including motor control, power supplies, and industrial control systems.

    Description:

    The NSV40200LT1G is a N-channel MOSFET with a voltage rating of 40V and a continuous drain current of 200A. It features a low on-state resistance (RDS(on)) of 5.5mOhm, which helps to minimize power dissipation and improve efficiency. The device is available in a TO-247AC package, which provides excellent thermal performance and makes it suitable for high power applications.

    Features:

    • High voltage rating of 40V
    • High continuous drain current of 200A
    • Low on-state resistance (RDS(on)) of 5.5mOhm
    • Available in a TO-247AC package for excellent thermal performance
    • Suitable for use in a wide range of applications, including motor control, power supplies, and industrial control systems

    Applications:

    • Motor control
    • Power supplies
    • Industrial control systems
    • High power switching applications
    • Battery management systems
    • Renewable energy systems, such as solar panels and wind turbines
    • Electric vehicles (EVs) and hybrid electric vehicles (HEVs)

    The NSV40200LT1G is a high performance MOSFET that offers excellent electrical characteristics and thermal performance. Its high voltage and current ratings make it suitable for use in a wide range of high power applications. The device's low on-state resistance helps to minimize power dissipation and improve efficiency, making it an ideal choice for use in power supply and motor control applications.

    Tech Specifications

    Configuration
    PPAP
    Maximum Base Emitter Saturation Voltage (V)
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Automotive
    Supplier Package
    Transistor Type
    Package / Case
    REACH Status
    Maximum Collector-Emitter Saturation Voltage (V)
    EU RoHS
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Collector Base Voltage (V)
    Frequency - Transition
    Current - Collector (Ic) (Max)
    ECCN
    Maximum Emitter Base Voltage (V)
    Supplier Temperature Grade
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    Lead Shape
    HTSUS
    Package
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    Maximum Collector-Emitter Voltage (V)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Package Height
    Mfr
    RoHS Status
    Vce Saturation (Max) @ Ib, Ic
    Package Length
    Series
    Type
    Minimum DC Current Gain
    Operating Junction Temperature (°C)
    Maximum DC Collector Current (A)
    Power - Max
    Part Status
    Current - Collector Cutoff (Max)
    Package Width
    Maximum Collector Cut-Off Current (nA)
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Base Product Number
    Mounting Style
    Unit Weight
    Transistor Polarity
    RoHS
    Minimum Operating Temperature
    Emitter- Base Voltage VEBO
    Qualification
    Maximum DC Collector Current
    Technology
    Gain Bandwidth Product fT
    Collector-Emitter Saturation Voltage
    Collector- Emitter Voltage VCEO Max
    Collector- Base Voltage VCBO
    Maximum Operating Temperature
    DC Collector/Base Gain hfe Min
    Pd - Power Dissipation
    USHTS

    NSV40200LT1G Documents

    Download datasheets and manufacturer documentation for NSV40200LT1G

    Ersa Mult Dev ASSY 07/Sep/2023      
    Ersa NSS,NSV40200L      
    Ersa NSS,NSV40200L      
    Ersa SOT23 27/Sep/2016      
    Ersa onsemi RoHS       onsemi REACH       Material Declaration NSV40200LT1G      

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