onsemi_NSV60601MZ4T3G
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onsemi
NSV60601MZ4T3G

276-NSV60601MZ4T3G
PDF Datasheet
Low VCE(sat) Transistor, NPN, 60 V, 6.0 A, SOT-223 (TO-261) 4 LEAD, 4000-REEL
12 Weeks

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Tech Specifications

Package/Case
SOT-223-4
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
60V
Collector-emitter Voltage-Max
300mV
Halogen Free
Halogen Free
Lead Free
Lead Free
Max Collector Current
6A
Max Operating Temperature
150°C
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NSV60601MZ4T3G Description

NSV60601MZ4T3G Description

The NSV60601MZ4T3G is a high-performance NPN transistor from onsemi, designed for a wide range of applications in the electronics industry. This device offers excellent electrical characteristics, making it an ideal choice for various power management and signal amplification tasks. With a maximum collector current of 6 A and a collector-emitter breakdown voltage of 60 V, the NSV60601MZ4T3G delivers robust performance in demanding environments.

NSV60601MZ4T3G Features

  • High Frequency Transition: The NSV60601MZ4T3G boasts a frequency transition of 100 MHz, making it suitable for high-speed switching and amplification applications.
  • Low Saturation Voltage: With a maximum Vce saturation of 300 mV at 600 mA and 6 A, this transistor ensures efficient power management and reduced power dissipation.
  • High DC Current Gain: The minimum hFE of 120 at 1 A and 2 V provides excellent signal amplification capabilities.
  • Surface Mount Package: The SOT223 package allows for easy integration into surface mount applications, reducing overall footprint and improving manufacturing efficiency.
  • RoHS Compliance: The NSV60601MZ4T3G is compliant with RoHS3 standards, making it suitable for environmentally friendly electronics production.
  • Low Moisture Sensitivity: With an MSL of 1, this device can withstand unlimited storage time, ensuring reliability and reducing the need for specialized handling.

NSV60601MZ4T3G Applications

The NSV60601MZ4T3G is ideal for a variety of applications where high current handling, low saturation voltage, and high-frequency performance are required. Some specific use cases include:

  • Power Management: In power supply designs, the NSV60601MZ4T3G can be used as a high-current switch or in the output stage for efficient power delivery.
  • Signal Amplification: The high hFE and low saturation voltage make this transistor suitable for audio and video amplification applications, where signal integrity is crucial.
  • Automotive Electronics: The NSV60601MZ4T3G can be used in automotive electronics for power management and signal amplification tasks, such as in infotainment systems and engine control modules.

Conclusion of NSV60601MZ4T3G

The NSV60601MZ4T3G is a versatile and high-performance NPN transistor from onsemi, offering a unique combination of high current handling, low saturation voltage, and high-frequency performance. Its surface mount package, RoHS compliance, and low moisture sensitivity make it an excellent choice for a wide range of applications in the electronics industry. With its robust electrical characteristics and unique features, the NSV60601MZ4T3G stands out as a reliable and efficient solution for power management and signal amplification tasks.

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The standard lead time for NSV60601MZ4T3G is 12 Weeks.
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