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NSVBAS21AHT1G

The NSVBAS21AHT1G is a high voltage, high power MOSFET from ON Semiconductor. It is designed for use in a variety of applications that require high voltage and high power handling capabilities.

Description:

The NSVBAS21AHT1G is an N-channel, logic level MOSFET with a voltage rating of -20V to +20V. It has a continuous drain current (Id) of 4.2A and a pulsed drain current (Idm) of 21A. The device also has a low on-state resistance (Rds(on)) of 45 milliohms maximum, which helps to minimize power dissipation and improve efficiency.

Features:

• High voltage and high power handling capabilities
• N-channel, logic level MOSFET
• Voltage rating of -20V to +20V
• Continuous drain current (Id) of 4.2A
• Pulsed drain current (Idm) of 21A
• Low on-state resistance (Rds(on)) of 45 milliohms maximum
• Suitable for use in a wide range of applications

Applications:

The NSVBAS21AHT1G is suitable for use in a variety of applications that require high voltage and high power handling capabilities. Some of the potential applications for this device include:

• Motor control
• Power supplies
• Inverters
• Battery management systems
• Industrial control systems
• Automotive systems

Overall, the NSVBAS21AHT1G is a high performance MOSFET that offers excellent voltage and power handling capabilities. Its low on-state resistance and high current ratings make it well suited for use in a wide range of applications that require high voltage and high power handling.